Datasheet > SS3H10/57T

SS3H10/57T

更新时间： 2024-11-20 08:48:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	360K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, PLASTIC, SMC, 2 PIN

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SS3H10/57T 数据手册

SS3H9 & SS3H10

Vishay General Semiconductor

New Product

High-Voltage Surface Mount Schottky Rectifier

High Barrier Tecnology for improved high

temperature performance

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

V_F

3.0 A

90 V, 100 V

100 A

0.65 V

I_R

20 µA

DO-214AB (SMC)

T_jmax.

175 °C

Features

Mechanical Data

• Low profile package

Case: DO-214AB (SMC)

• Ideal for automated placement

Epoxy meets UL 94V-0 Flammability rating

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current

Polarity: Color band denotes the cathode end

• High surge capability

• Meets MSL level 1, per J-STD-020C

• Solder Dip 260 °C 40 seconds

Typical Applications

For use in low voltage high frequency inverters, free

wheeling, dc-to-dc converters, and polarity protection

applications

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Device marking code

Symbol

SS3H9

MS9

SS3H10

MS10

100

Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RWM

V_DC

Working peak reverse voltage

100

Maximum DC blocking voltage

Maximum average forward rectified current at: T_L= 115 °C

I_F(AV)

I_FSM

3.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

100

Peak repetitive reverse surge current at t_p= 2.0 µs, 1 KHz

I_RRM

1.0

Critical rate of rise of reverse voltage

dv/dt

10000

V/µs

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

Document Number 88752

24-Oct-05

www.vishay.com

12 3 4

中文翻译

下载PDF

SS3H10/57T 替代型号

型号	品牌	替代类型	描述	数据表
SS3H10-E3/9AT	VISHAY	完全替代	DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN,
SK310	DIOTEC	功能相似	Surface Mount Schottky-Rectifiers

与SS3H10/57T相关器件

型号	品牌	获取价格	描述	数据表
SS3H10-E3	VISHAY	获取价格	High-Voltage Surface Mount Schottky Rectifier
SS3H10-E3/57T	VISHAY	获取价格	DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN,
SS3H10-E3/9AT	VISHAY	获取价格	DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN,
SS3H10-HE3	VISHAY	获取价格	DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rect
SS3H10HE3/57T	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, ROHS CO
SS3H10-HE3/57T	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, ROHS CO
SS3H10-HE3/9AT	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, ROHS CO
SS3H10HE3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, SMC, 2
SS3H10HE3_A/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, SMC, 2
SS3H10HE3_B/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, SMC, 2

与SS3H10/57T相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

SS3H10/57T

SS3H10/57T 数据手册

SS3H10/57T 替代型号

与SS3H10/57T相关器件

与SS3H10/57T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SS3H10/57T

SS3H10/57T 数据手册

SS3H10/57T 替代型号

与SS3H10/57T相关器件

与SS3H10/57T相关文章

您还可以找

您在本页遇到什么问题？