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SS3H10 PDF预览

SS3H10

更新时间： 2024-11-18 22:14:11
品牌 Logo 应用领域
威世 - VISHAY 整流二极管高压
页数 文件大小 规格书
2页 78K
描述
High Voltage Surface Mount Schottky Barrier Rectifiers

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中文翻译

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SS3H10 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.65配置：SINGLE
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.65 V
最大非重复峰值正向电流：100 A元件数量：1
最高工作温度：175 °C最大输出电流：3 A
最大重复峰值反向电压：100 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
Base Number Matches：1

SS3H10 数据手册

 浏览型号SS3H10的Datasheet PDF文件第2页 
SS3H9 and SS3H10  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
High Voltage Surface Mount  
Schottky Barrier Rectifiers  
Reverse Voltage 90 to 100V  
Forward Current 3.0A  
Cathode Band  
DO-214AB  
(SMC)  
Mounting Pad Layout  
0.185 MAX.  
(4.69 MAX.)  
0.126 (3.20)  
0.114 (2.90)  
0.245 (6.22)  
0.220 (5.59)  
0.126 MIN.  
(3.20 MIN.)  
Dimensions in inches  
and (millimeters)  
0.280 (7.11)  
0.260 (6.60)  
0.060 MIN.  
(1.52 MIN.)  
0.012 (0.305)  
0.006 (0.152)  
0.103 (2.62)  
0.079 (2.06)  
0.320 REF  
0.060 (1.52)  
0.030 (0.76)  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
0.008  
(0.203)  
Max.  
0.320 (8.13)  
0.305 (7.75)  
• Low profile surface mount package  
• Built-in strain relief  
Mechanical Data  
Case: JEDEC DO-214AB molded plastic body  
• Low power loss, high efficiency  
• For use in low voltage high frequency inverters, free  
wheeling, and polarity protection applications  
Terminals: Solder plated, solderable per  
MIL-STD750, Method 2026  
• Guardring for overvoltage protection  
Polarity: Color band denotes cathode end  
Weight: 0.007 oz., 0.25 g  
• High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
SS3H9  
MS9  
90  
SS3H10  
MS10  
100  
Unit  
Device marking code  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
Maximum average forward rectified current at: TL = 115°C  
VRRM  
VRWM  
VDC  
V
V
V
A
90  
100  
90  
100  
IF(AV)  
3.0  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
100  
A
Peak repetitive reverse surge current at tp = 2.0µs, 1KHZ  
IRRM  
dv/dt  
1.0  
A
Critical rate of rise of reverse voltage  
10,000  
V/µs  
Typical thermal resistance – junction to lead TL = 25°C  
– junction to ambient(2)  
RθJL  
RθJA  
9.7  
32  
°C/W  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
–65 to +175  
Electrical Characteristics (TA = 25°C unless otherwise noted)  
Maximum instantaneous  
IF = 3.0A, TJ = 25°C  
IF = 3.0A, TJ = 125°C  
0.8  
0.65  
VF  
V
forward voltage at:(1)  
Maximum DC reverse current  
at rated DC blocking voltage  
TJ = 25°C  
TJ = 125°C  
20  
4
µA  
mA  
IR  
Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle  
(2) PCB mounted  
Document Number 88752  
18-Aug-04  
www.vishay.com  
1
12

中文翻译

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SS3H10 替代型号

型号 品牌 替代类型 描述 数据表
SS3H10-E3/57T VISHAY

功能相似

 DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN,

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 		DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN,
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 		DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rect
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SS3H10-HE3/57T VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, ROHS CO
SS3H10HE3_A/H VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, SMC, 2
SS3H10HE3_A/I VISHAY

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