SS32D THRU SS3AD
Schottky Barrier Rectifiers
Reverse Voltage - 20 to 100 V
Forward Current - 3 A
PINNING
Features
PIN
1
DESCRIPTION
Cathode
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Anode
2
• Metal silicon junction, majority carrier conduction
• For surface mount applications
• Low power loss, high efficiency
1
2
• High current capability, low forward voltage drop.
• Low profile package
Top view
Plastic Package : SMB(DO-214AA)
• Built-in strain relief, ideal for automated placement
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
• Case: SMB (DO-214AA), molded plastic body
• Terminals: Solder plated, solderable per
MIL-STD-750, method 2026
• Polarity: Color band denotes cathode end
Absolute Maximum Ratings and Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive
load. For capactive load, derate by 20 %.
SS32D SS33D SS34D SS35D SS36D SS38D SS3AD
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Symbols
VRRM
Units
V
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
57
80
100
71
VRMS
V
Maximum DC Blocking Voltage
VDC
100
V
Maximum Average Forward Rectified Current
at 0.375"(9.5 mm) Lead Length
IF(AV)
3
A
A
Peak Forward Surge Current 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
80
Maximum Instantaneous Forward Voltage at 3 A
VF
IR
0.55
0.75
0.85
V
1.5
at TJ = 25℃
at TJ = 100℃
Maximum Reverse Current at Rated
DC Blocking at Voltage
mA
20
10
160
Typical Junction Capacitance 1)
Typical Thermal Resistance 2)
Operating Junction Temperature Range
Storage Temperature Range
Cj
RθJA
Tj
250
pF
℃/W
℃
55
- 65 to + 125
- 65 to + 150
- 65 to + 150
Tstg
℃
1) Measured at 1 MHz and reverse voltage of 4 V
2) P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas.
1 / 3
®
Dated:20/07/2023 GD Rev:02