Datasheet > SS36BF

SS36BF

更新时间： 2024-11-26 14:50:59

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	1157K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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SS36BF 数据手册

SS32BF THRU SS320BF

Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200V

Forward Current - 3.0A

∠ALL ROUND

FEATURES

H_E

• Metal silicon junction, majority carrier conduction

• For surface mounted applications

• Low power loss, high efficiency

• High forward surge current capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Top View

Bottom View

MECHANICAL DATA

• Case: SMBF

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 57mg / 0.002oz

∠

UNIT

0.26

0.18

H_E

5.5

5.1

max

min

max

min

1.3

1.1

4.4

4.2

3.7

3.5

2.2

1.9

1.0

9°

173

165

146

138

216

200

mil

Absolute Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,

for capacitive load, derate by 20 %

Symbols

Units

Parameter

SS32BF SS34BF SS36BF SS38BF

SS39BF SS310BF S315BF SS320BF

Maximum Repetitive Peak Reverse Voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum RMS voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

100

I_F(AV)

3.0

Peak Forward Surge Current,8.3ms

Single Half Sine-wave Superimposed

on Rated Load (JEDEC method)

I_FSM

Max Instantaneous Forward Voltage at 3 A

V_F

I_R

0.55

0.70

0.85

0.95

0.5

0.3

Maximum DC Reverse Current

at Rated DC Reverse Voltage

T_a= 25°C

T_a=100°C

Typical Junction Capacitance^（1）

Typical Thermal Resistance^（2）

450

400

C_j

°C/W

°C

R_θJA

T_j

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +125

-55 ~ +150

T_stg

°C

（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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