Datasheet > SS35BF

SS35BF

更新时间： 2024-09-18 14:50:59

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	1157K
描述
肖特基二极管

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SS35BF 技术参数

Case Style：	SMBF	IF（A）：	3.0
Maximum recurrent peak reverse voltage：	50	Peak forward surge current：	100
Maximum instantaneous forward voltage：	0.70	@IF(A)：	3.0
Maximum reverse current：	0.5	TJ(℃）：	/
class：	Diodes

SS35BF 数据手册

SS32BF THRU SS320BF

Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200V

Forward Current - 3.0A

∠ALL ROUND

FEATURES

H_E

• Metal silicon junction, majority carrier conduction

• For surface mounted applications

• Low power loss, high efficiency

• High forward surge current capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Top View

Bottom View

MECHANICAL DATA

• Case: SMBF

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 57mg / 0.002oz

∠

UNIT

0.26

0.18

H_E

5.5

5.1

max

min

max

min

1.3

1.1

4.4

4.2

3.7

3.5

2.2

1.9

1.0

9°

173

165

146

138

216

200

mil

Absolute Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,

for capacitive load, derate by 20 %

Symbols

Units

Parameter

SS32BF SS34BF SS36BF SS38BF

SS39BF SS310BF S315BF SS320BF

Maximum Repetitive Peak Reverse Voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum RMS voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

100

I_F(AV)

3.0

Peak Forward Surge Current,8.3ms

Single Half Sine-wave Superimposed

on Rated Load (JEDEC method)

I_FSM

Max Instantaneous Forward Voltage at 3 A

V_F

I_R

0.55

0.70

0.85

0.95

0.5

0.3

Maximum DC Reverse Current

at Rated DC Reverse Voltage

T_a= 25°C

T_a=100°C

Typical Junction Capacitance^（1）

Typical Thermal Resistance^（2）

450

400

C_j

°C/W

°C

R_θJA

T_j

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +125

-55 ~ +150

T_stg

°C

（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

下载PDF

与SS35BF相关器件

型号	品牌	获取价格	描述	数据表
SS35BFH	YANGJIE	获取价格	SMBF
SS35B-LFR	FRONTIER	获取价格	3A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SS35C	SUNMATE	获取价格	3A Patch Schottky diode 50V SMC series
SS35C	SWST	获取价格	肖特基整流管
SS35CF	BL Galaxy Electrical	获取价格	3A,50V, Surface Mount Schottky Barrier Rectifiers
SS35D	SWST	获取价格	肖特基整流管
SS35-E3	VISHAY	获取价格	DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Recti
SS35-E3/57T	VISHAY	获取价格	DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN,
SS35-E3/9AT	VISHAY	获取价格	DIODE SCHOTTKY 50V 3A DO214AB
SS35-E3-9AT	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifier