Datasheet > SS3413LSTT

SS3413LSTT

更新时间： 2024-11-12 00:53:43

品牌	Logo	应用领域
SECELECTRONICS		/
页数	文件大小	规格书
10页	293K
描述
CMOS Omnipolar High Sensitivity Micropower Hall Switch

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SS3413LSTT 数据手册

SS3413

CMOS Omnipolar High Sensitivity Micropower Hall Switch

Features

−

Micropower consumption for battery powered applications

Omnipolar, output switches with absolute value of North or South pole from magnet

Operation down to 2.5V

High sensitivity for direct reed switch replacement applications

3 pin SOT23 (suffix SO)

3 pin SIP (suffix UA)

General Description

The SS3413 Omnipolar Hall effect sensor IC is fab-

ricated from mixed signal CMOS technology .It in-

corporates advanced chopper-stabilization techniques

to provide accurate and stable magnetic switch points.

The circuit design provides an internally controlled

clocking mechanism to cycle power to the Hall ele-

ment and analog signal processing circuits. This

serves to place the high current-consuming portions

of the circuit into a “Sleep” mode. Periodically the

device is “Awakened” by this internal logic and the

magnetic flux from the Hall element is evaluated

against the predefined thresholds. If the flux density

is above or below the Bop/Brp thresholds then the

output transistor is driven to change states according-

ly. While in the “Sleep” cycle the output transistor is

latched in its previous state. The design has been op-

timized for service in applications requiring extended

operating lifetime in battery powered systems.

The output transistor of the SS3413 will be latched on

(Bop) in the presence of a sufficiently strong South or

North magnetic field facing the marked side of the

package. The output will be latched off (Brp) in the

absence of a magnetic field.

Applications

−

Solid state switch

Handheld Wireless Handset Awake Switch

Lid close sensor for battery powered devices

Magnet proximity sensor for reed switch replacement in low duty cycle applications

V3.10 Nov 1, 2013

12 3 4 5 6 7...10

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