SS32, SS33, SS34, SS35, SS36
www.vishay.com
Vishay General Semiconductor
Surface-Mount Schottky Barrier Rectifier
FEATURES
Available
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
SMC (DO-214AB)
Available
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Cathode
Anode
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
A
3
D
Design Tools
Related
Documents
3D Models
Models
Application
Notes
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Marking
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: SMC (DO-214AB)
IF(AV)
3.0 A
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
VRRM
20 V, 30 V, 40 V, 50 V, 60 V
100 A
IFSM
EAS
20 mJ
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
VF
0.5 V, 0.75 V
150 °C
TJ max.
Package
Circuit configuration
SMC (DO-214AB)
Single
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS32
SS33
S3
SS34
S4
SS35
S5
SS36
S6
UNIT
Device marking code
S2
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
20
30
40
50
60
V
V
V
A
14
21
28
35
42
Maximum DC blocking voltage
Maximum average forward rectified current at TL (fig. 1)
20
30
40
50
60
IF(AV)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
EAS
100
20
A
Non-repetitive avalanche energy at TA = 25 °C,
mJ
IAS = 2.0 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dV/dt
TJ
10 000
V/μs
°C
-55 to +150
-55 to +150
TSTG
°C
Revision: 23-Apr-2020
Document Number: 88751
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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