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SS32HE3/9AT PDF预览

SS32HE3/9AT

更新时间： 2024-01-26 09:43:08
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 1030K
描述
DIODE SCHOTTKY 20V 3A DO214AB

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中文翻译

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SS32HE3/9AT 数据手册

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SS32, SS33, SS34, SS35, SS36  
www.vishay.com  
Vishay General Semiconductor  
Surface-Mount Schottky Barrier Rectifier  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
SMC (DO-214AB)  
Available  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
Cathode  
Anode  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
LINKS TO ADDITIONAL RESOURCES  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
A
3
D
3
D
Design Tools  
Related  
Documents  
3D Models  
Models  
Application  
Notes  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
Marking  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SMC (DO-214AB)  
IF(AV)  
3.0 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
VRRM  
20 V, 30 V, 40 V, 50 V, 60 V  
100 A  
IFSM  
EAS  
20 mJ  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
VF  
0.5 V, 0.75 V  
150 °C  
TJ max.  
Package  
Circuit configuration  
SMC (DO-214AB)  
Single  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS32  
SS33  
S3  
SS34  
S4  
SS35  
S5  
SS36  
S6  
UNIT  
Device marking code  
S2  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
V
V
V
A
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
EAS  
100  
20  
A
Non-repetitive avalanche energy at TA = 25 °C,  
mJ  
IAS = 2.0 A, L = 10 mH  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/μs  
°C  
-55 to +150  
-55 to +150  
TSTG  
°C  
Revision: 23-Apr-2020  
Document Number: 88751  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

中文翻译

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SS32HE3/9AT 替代型号

型号 品牌 替代类型 描述 数据表
SS32HE3_A/I VISHAY

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