Datasheet > SS32F-SMAF_17

SS32F-SMAF_17

更新时间： 2024-11-02 01:19:23

品牌	Logo	应用领域
佑风微 - YFW		/
页数	文件大小	规格书
3页	424K
描述
Surface Mount Schottky Barrier Rectifier

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中文翻译

获取价格

数据手册

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SS32F-SMAF_17 数据手册

SS32F THRU SS320F

Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200 V

Forward Current - 3.0A

PINNING

DESCRIPTION

Cathode

Anode

Features

• Metal silicon junction, majority carrier conduction

• For surface mounted applications

• Low power loss, high efficiency

• High forward surge current capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Top View

Marking Code: SS32 — SS320

Simplified outline SMAF and symbol

MECHANICAL DATA

• Case: SMAF

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 27mg / 0.00095oz

Absolute Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,

for capacitive load, derate by 20 %

Symbols

SS32F SS34F SS34AF SS36F SS38F SS310F SS312F SS315F SS320F

Units

Parameter

Maximum Repetitive Peak Reverse Voltage

V_RRM

V_RMS

V_DC

31.5

3.0

100

120

150

105

150

200

140

200

Maximum RMS voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

100

120

I_F(AV)

Peak Forward Surge Current,8.3ms

Single Half Sine-wave Superimposed

on Rated Load (JEDEC method)

I_FSM

Max Instantaneous Forward Voltage at 3 A

V_F

0.55

0.70

0.85

0.95

T_a= 25°C

Maximum DC Reverse Current

at Rated DC Reverse Voltage

0.5

0.3

T_a=100°C

I_R

Typical Junction Capacitance^（1）

Typical Thermal Resistance^（2）

250

180

C_j

°C/W

°C

R_θJA

T_j

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_stg

°C

（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

www.yfwdiode.com

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中文翻译

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