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SS320 PDF预览

SS320

更新时间: 2024-11-12 21:03:27
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 873K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

SS320 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDSO-C2Reach Compliance Code:unknown
风险等级:4.73Is Samacsys:N
其他特性:LOW POWER LOSS, FREE WHEELING DIODE应用:FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.9 V
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e3最大非重复峰值正向电流:70 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:200 V最大反向电流:100 µA
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SS320 数据手册

 浏览型号SS320的Datasheet PDF文件第2页浏览型号SS320的Datasheet PDF文件第3页浏览型号SS320的Datasheet PDF文件第4页 
RoHS  
SS32 THRU SS320  
COMPLIANT  
Surface Mount Schottky Rectifier  
Features  
Guardring for overvoltage protection  
Low power losses  
● Extremely fast switching  
● High forward surge capability  
High frequency operation  
● Solder dip 260 °C max. 10s, per JESD 22-B106  
Typical Applications  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
Mechanical Data  
ackage: DO-  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per J-STD-  
002 and JESD22-B102  
Color band denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
SS32  
SS32  
20  
SS34  
SS34  
40  
SS36  
SS36  
60  
SS310  
SS310  
100  
SS315  
SS315  
150  
SS320  
SS320  
200  
PARAMETER  
SYMBOL  
UNIT  
Device marking code  
VRRM  
V
A
Repetitive Peak Reverse Voltage  
Average Rectified Output Current  
@60Hz sine wave, Resistance load, Ta (FIG.1)  
IO  
3.0  
70  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Ta=25  
IFSM  
A
Storage Temperature  
Junction Temperature  
T
-55 ~+150  
stg  
T
j
-55~+125  
-55 ~+150  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
SS32  
SS34  
SS36  
SS310  
SS315  
SS320  
PARAMETER  
SYMBOL  
UNIT  
TEST CONDITIONS  
Maximum instantaneous  
forward voltage drop per diode  
VF  
IFM=3.0A  
V
0.50  
0.70  
0.85  
0.90  
T =25℃  
0.2  
20  
0.1  
5.0  
a
Maximum DC reverse current  
at rated DC blocking voltage  
per diode  
IR  
mA  
pF  
T =100℃  
a
Measured at 1MHZ  
and Applied Reverse  
Voltage of 4.0 V.D.C.  
Typical junction capacitance  
Cj  
180  
150  
130  
80  
1 / 4  
S-S136  
Rev. 2.3, 28-Apr-14  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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