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SS32-M3_15 PDF预览

SS32-M3_15

更新时间: 2024-01-08 20:30:42
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 91K
描述
Surface Mount Schottky Barrier Rectifier

SS32-M3_15 数据手册

 浏览型号SS32-M3_15的Datasheet PDF文件第2页浏览型号SS32-M3_15的Datasheet PDF文件第3页浏览型号SS32-M3_15的Datasheet PDF文件第4页 
SS32-M3, SS33-M3, SS34-M3, SS35-M3, SS36-M3  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
DO-214AB (SMC)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
VRRM  
IFSM  
20 V, 30 V, 40 V, 50 V, 60 V  
100 A  
MECHANICAL DATA  
Case: DO-214AB (SMC)  
Molding compound meets UL 94 V-0 flammability rating  
EAS  
20 mJ  
VF  
0.5 V, 0.75 V  
150 °C  
TJ max.  
Package  
Diode variation  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
DO-214AB (SMC)  
Single die  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS32  
SS33  
S3  
SS34  
S4  
SS35  
S5  
SS36  
S6  
UNIT  
Device marking code  
S2  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
V
V
V
A
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
EAS  
100  
20  
A
Non-repetitive avalanche energy at TA = 25 °C,  
mJ  
IAS = 2.0 A, L = 10 mH  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/µs  
°C  
-55 to +150  
-55 to +150  
TSTG  
°C  
Revision: 04-Aug-15  
Document Number: 89496  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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