Datasheet > SS2FH10HM3/I

SS2FH10HM3/I

更新时间： 2024-11-28 01:12:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	122K
描述
Surface Mount Schottky Barrier Rectifier

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SS2FH10HM3/I 数据手册

SS2FH10

Vishay General Semiconductor

www.vishay.com

Surface Mount Schottky Barrier Rectifier

FEATURES

Available

• Low profile package

• Ideal for automated placement

• Low forward voltage drop, low power losses

• Low leakage current

eSMP^®Series

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• Wave and reflow solderable

Top view

Bottom view

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

DO-219AB (SMF)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency inverters, freewheeling, DC/DC

converters, and polarity protection in commercial, industrial,

and automotive applications.

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

100 V

50 A

V_RRM

MECHANICAL DATA

I_FSM

V_Fat I_F= 2.0 A (T_A= 125 °C)

T_Jmax.

Case: DO-219AB (SMF)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

0.63 V

175 °C

Package

DO-219AB (SMF)

Single die

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

Diode variations

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS2FH10

210

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

100

(1)

I_F(AV)

2.0

Non-repetitive peak forward surge current 8.3 ms single half

sine-wave at T_{J (init)}= 25 °C

I_FSM

Operating junction and storage temperature range

T_J, T_STG

-55 to +175

°C

Note

(1)

Free air, mounted on recommended copper pad area

Revision: 01-Sep-16

Document Number: 87749

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

SS2FH10HM3/I 替代型号

型号	品牌	替代类型	描述	数据表
SS2FH10HM3/H	VISHAY	完全替代	Surface Mount Schottky Barrier Rectifier

与SS2FH10HM3/I相关器件

型号	品牌	获取价格	描述	数据表
SS2FH10-M3/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-219AB, HALOGEN
SS2FH10-M3/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-219AB, HALOGEN
SS2FH6	VISHAY	获取价格	Surface-Mount Schottky Barrier Rectifiers
SS2FH6HM3/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-219AB, HALOGEN
SS2FL3	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifier
SS2FL3HM3/H	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifier
SS2FL3HM3/I	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifier
SS2FL3-M3/H	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifier
SS2FL3-M3/I	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifier
SS2FL4	VISHAY	获取价格	Surface-Mount Schottky Barrier Rectifier

与SS2FH10HM3/I相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

SS2FH10HM3/I

SS2FH10HM3/I 数据手册

SS2FH10HM3/I 替代型号

与SS2FH10HM3/I相关器件

与SS2FH10HM3/I相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SS2FH10HM3/I

SS2FH10HM3/I 数据手册

SS2FH10HM3/I 替代型号

与SS2FH10HM3/I相关器件

与SS2FH10HM3/I相关文章

您还可以找

您在本页遇到什么问题？