Datasheet > SS275TI12205

SS275TI12205

更新时间： 2024-11-20 02:52:35

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描述
Silicon Carbide Schottky Diode

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中文翻译

获取价格

数据手册

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SS275TI12205 数据手册

SS275TA12205, SS275TC12205, SS275TI12205

V_RRM= 1200 V

Silicon Carbide Schottky Diode

Part Number

V_RRM(V)

I_F(AVG)(A) Configuration

I_F(AVG)

C_J

5 A

SS275TA12205

SS275TC12205

SS275TI12205

1200

Triple Common Anode

= 90 pF

1200

Triple Common Cathode

Triple Independent

1200

Triple Anode (TA)

Triple Cathode (TC)

Triple Independent (TI)

A = Anode C = Cathode

Symbol Parameter per diode

Test Conditions Maximum Ratings

Features

V_RRM

Repetitive Peak Reverse Voltage

Repetitive Surge Reverse Voltage

DC Blocking Voltage

1200

 1200 V SiC Schottky Diode

 Surface Mount Package

 Zero Reverse Recovery

V_RSM

V_DC

 Zero Forward Recovery

Average Forward Current

 High-Frequency Operation

 Temperature-Independent Behavior

 Positive Temperature Coefficient for V

I_F(AVG)

T_J= 175°C

T_C= 25°C, t_P= 8 ms

Half Sine Wave

Repetitive Peak Forward Surge Current

Non-Repetitive Peak Forward Surge Current

Operating Virtual Junction Temperature

100

I_FRM

Applications

T_C= 25°C, t_P= 10 µs

Pulse

I_FSM

T_VJ

 MHz Switch Mode Power Supplies

 High-Frequency Converters

 Resonant Converters

-55 to +175

°C

 Rectifier Circuits

T_STG

P_TOT

Storage Temperature

-55 to +175

°C

100

T_C= 25 °C (33.3 W per diode)

Symbol

Parameter per diode

Test Conditions

Characteristic Values

T_J= 25°C unless otherwise specified

Typ.

Max. Units

Forward Voltage

V_F

I_F= 5 A, T_J= 25°C

T_J= 175°C

1.5

2.5

1.8

Reverse Current

I_R

V_R= 1200 V, T_J= 25°C

T_J= 175°C

100

200

μA

1000

Junction Capacitance

f = 1 MHz, V_R= 0 V

V_R= 200 V

575

120

C_J

V_R= 1200 V

Capacitive Charge

V_R= 1200 V

108

1.5

°C/W

°C

Q_C

Thermal Resistance

R_THJC

Lead Soldering Temperature

1.6 mm (0.063 in) from case for 10 s

300

T_L

Pin to Substrate

Isolation

>2000

>1700

RMS

Pin to Pin

Weight

12 3

中文翻译

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