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SS26BF PDF预览

SS26BF

更新时间: 2024-09-18 17:15:39
品牌 Logo 应用领域
友台半导体 - UMW 肖特基二极管
页数 文件大小 规格书
3页 558K
描述
肖特基二极管

SS26BF 数据手册

 浏览型号SS26BF的Datasheet PDF文件第2页浏览型号SS26BF的Datasheet PDF文件第3页 
RR  
UMW  
UMW SS22BF THRU SS220BF  
20V-200V 2A  
SMBF  
FEATURES  
Cathode Band  
Top View  
Metal silicon junction, majority carrier conduction  
• For surface mounted applications  
0.086(2.20)  
0.146(3.70)  
0.138(3.50)  
0.075(1.90)  
• Low power loss, high efficiency  
• High forward surge current capability  
0.173(4.4)  
0.165(4.2)  
• For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
0.051(1.30)  
0.043(1.10)  
0.010(0.26)  
0.0071(0.18)  
0.051(1.30)  
0.039(1.0)  
MECHANICAL DATA  
0.216(5.5)  
Case: SMBF  
0.200(5.10)  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 57mg / 0.002oz  
Dimensions in inches and (millimeters)  
Absolute Maximum Ratings and Electrical characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,  
for capacitive load, derate by 20 %  
Symbols  
SS22BF SS24BF SS26BF SS28BF SS210BF SS212BF SS215BF SS220BF  
Units  
V
Parameter  
Maximum Repetitive Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
40  
28  
40  
60  
42  
60  
80  
56  
80  
100  
70  
120  
84  
150  
105  
150  
200  
140  
200  
Maximum RMS voltage  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
100  
120  
V
IF(AV)  
2.0  
A
Peak Forward Surge Current,8.3ms  
Single Half Sine-wave Superimposed  
on Rated Load (JEDEC method)  
IFSM  
55  
45  
A
V
Max Instantaneous Forward Voltage at 2 A  
VF  
IR  
0.55  
0.70  
0.85  
0.95  
0.5  
5
0.3  
3
Maximum DC Reverse Current  
at Rated DC Reverse Voltage  
Ta = 25°C  
Ta =100°C  
mA  
Typical Junction Capacitance 1  
pF  
250  
110  
Cj  
2  
Typical Thermal Resistance  
°C/W  
°C  
RθJA  
Tj  
65  
Operating Junction Temperature Range  
Storage Temperature Range  
-55 ~ +125  
-55 ~ +150  
Tstg  
°C  
1)  
Measured at 1MHz and applied reverse voltage of 4 V D.C.  
2)  
P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas.  
www.umw-ic.com  
1
友台半导体有限公司  

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