RR
UMW
UMW SS22BF THRU SS220BF
20V-200V 2A
SMBF
FEATURES
Cathode Band
Top View
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
0.086(2.20)
0.146(3.70)
0.138(3.50)
0.075(1.90)
• Low power loss, high efficiency
• High forward surge current capability
0.173(4.4)
0.165(4.2)
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
0.051(1.30)
0.043(1.10)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
0.216(5.5)
• Case: SMBF
0.200(5.10)
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 57mg / 0.002oz
Dimensions in inches and (millimeters)
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Symbols
SS22BF SS24BF SS26BF SS28BF SS210BF SS212BF SS215BF SS220BF
Units
V
Parameter
Maximum Repetitive Peak Reverse Voltage
VRRM
VRMS
VDC
20
14
20
40
28
40
60
42
60
80
56
80
100
70
120
84
150
105
150
200
140
200
Maximum RMS voltage
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
100
120
V
IF(AV)
2.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
IFSM
55
45
A
V
Max Instantaneous Forward Voltage at 2 A
VF
IR
0.55
0.70
0.85
0.95
0.5
5
0.3
3
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Ta = 25°C
Ta =100°C
mA
Typical Junction Capacitance 1)
pF
250
110
Cj
2)
Typical Thermal Resistance
°C/W
°C
RθJA
Tj
65
Operating Junction Temperature Range
Storage Temperature Range
-55 ~ +125
-55 ~ +150
Tstg
°C
1)
Measured at 1MHz and applied reverse voltage of 4 V D.C.
2)
P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas.
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