Datasheet > SS25S-M3

SS25S-M3

更新时间： 2024-11-14 14:51:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	86K
描述
Surface Mount Schottky Barrier Rectifier

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中文翻译

获取价格

数据手册

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SS25S-M3 数据手册

SS25S-M3, SS26S-M3

Vishay General Semiconductor

www.vishay.com

Surface-Mount Schottky Barrier Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

• High surge capability

SMA (DO-214AC)

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Cathode

Anode

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

For use in low voltage, high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMA (DO-214AC)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2.0 A

50 V, 60 V

40 A

V_RRM

Base P/N-M3

- halogen-free, RoHS compliant, and

I_FSM

commercial grade

V_Fat I_F= 2.0 A

T_Jmax.

0.53 V

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

150 °C

Package

SMA (DO-214AC)

Single

Circuit configuration

Polarity: color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS25S-M3

25S

SS26S-M3

26S

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

2.0

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

I_FSM

Operating junction temperature range

T_J, T_STG

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.51

0.60

0.43

0.53

MAX.

UNIT

I_F= 1.0 A

T_A= 25 °C

I_F= 2.0 A

I_F= 1.0 A

I_F= 2.0 A

0.75

Maximum instantaneous

forward voltage

(1)

V_F

T_A= 125 °C

0.62

200

T_A= 25 °C

μA

(2)

Maximum reverse current

Rated V_R

I_R

T_A= 125 °C

1.5

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width ≤ 40 ms

(2)

Revision: 15-May-2020

Document Number: 89410

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

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与SS25S-M3相关器件

型号	品牌	获取价格	描述	数据表
SS25S-M3/5AT	VISHAY	获取价格	DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLAS
SS25S-M3/61T	VISHAY	获取价格	DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLAS
SS25-T	MCC	获取价格	Rectifier Diode,
SS25-T3	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, SMB, 2 P
SS25-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, SMB, 2 P
SS25-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AC, ROHS COM
SS25-TR30	TAITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, ROHS COM
SS25-TR70	TAITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, ROHS COM
SS25V150MTA5X5	MERITEK	获取价格	Aluminum Electrolytic Capacitor, Aluminum (wet)
SS25W	HOTTECH	获取价格	SOD-123

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