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SS25AF4 PDF预览

SS25AF4

更新时间: 2024-11-13 19:28:31
品牌 Logo 应用领域
扬杰 - YANGJIE 功效瞄准线光电二极管
页数 文件大小 规格书
4页 634K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

SS25AF4 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMA, 2 PINReach Compliance Code:unknown
风险等级:5.6其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:50 V最大反向电流:500 µA
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SS25AF4 数据手册

 浏览型号SS25AF4的Datasheet PDF文件第2页浏览型号SS25AF4的Datasheet PDF文件第3页浏览型号SS25AF4的Datasheet PDF文件第4页 
RoHS  
SS22A THRU SS220A  
COMPLIANT  
Surface Mount Schottky Rectifier  
Features  
Low profile package  
Ideal for automated placement  
Guardring for overvoltage protection  
Low power losses, high efficiency  
● High forward surge capability  
Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
Mechanical Data  
ackage: DO-214AC (  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
SS  
PARAMETER  
SYMBOL UNIT  
22A  
23A  
24A  
25A  
26A  
SS  
28A  
210A  
215A 220A  
Device marking code  
22A  
20  
23A  
30  
24A  
40  
25A  
50  
26A  
28A  
80  
210A  
100  
215A  
150  
220A  
200  
V
60  
Repetitive Peak Reverse Voltage  
V
A
RRM  
Average Rectified Output Current  
@60Hz Half-sine wave, Resistance load,  
Ta (FIG.1)  
I
O
2.0  
Surge(Non-repetitive)Forward Current  
@ 60Hz Half-sine wave,1 cycle, Ta=25℃  
I
A
FSM  
50  
T
j
Junction Temperature  
Storage Temperature  
-55~+125  
-55 ~+150  
T
-55 ~+150  
stg  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
SS  
TEST  
UNIT  
PARAMETER  
SYMBOL  
CONDITIONS  
22A  
23A  
24A  
25A  
26A  
28A 210A 215A 220A  
0.85 0.90  
Maximum instantaneous  
forward voltage drop per diode  
V
I
=2.0A  
FM  
V
0.50  
0.70  
F
Ta=25℃  
0.50  
10  
0.10  
5
Maximum DC reverse current at  
rated DC blocking voltage  
per diode@ VRM=VRRM  
I
mA  
RRM  
Ta=100℃  
1 / 4  
S-S128  
Rev. 2.3, 28-Apr-14  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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