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SS259_1311 PDF预览

SS259_1311

更新时间: 2024-11-14 01:00:03
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SECELECTRONICS /
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7页 237K
描述
CMOS Omnipolar High Sensitivity Micropower Hall Switch

SS259_1311 数据手册

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SS259  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
Packages  
Features and Benefits  
Operation down to 2.5V  
Micropower consumption for battery  
powered applications  
High sensitivity for direct reed switch  
replacement applications  
Omnipolar, output switches with absolute  
value of North or South pole from magnet  
3 pin SOT23 (suffix SO)  
3 pin SIP (suffix UA)  
Functional Block Diagram  
Application Examples  
Solid-state switch  
VDD  
Handheld Wireless Handset Awake Switch  
Lid close sensor for battery powered devices  
Magnet proximity sensor for reed switch  
replacement in low duty cycle applications  
Sleep/Awake  
Logic  
OUT  
Chopper  
Hall  
Plate  
GND  
General Description:  
The SS259 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates  
advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.  
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and  
analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a  
“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall  
element is evaluated against the predefined thresholds. If the flux density is above or below the BOP/BRP thresh-  
olds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output tran-  
sistor is latched in its previous state. The design has been optimized for service in applications requiring extended  
operating lifetime in battery powered systems.  
The output transistor of the SS259 will be latched on (BOP) in the presence of a sufficiently strong South or North  
magnetic field facing the marked side of the package. The output will be latched off (BRP) in the absence of a  
magnetic field.  
1
V3.10 Nov 1, 2013  

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