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SS22S_15 PDF预览

SS22S_15

更新时间: 2024-11-14 01:25:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 72K
描述
Surface Mount Schottky Barrier Rectifier

SS22S_15 数据手册

 浏览型号SS22S_15的Datasheet PDF文件第2页浏览型号SS22S_15的Datasheet PDF文件第3页浏览型号SS22S_15的Datasheet PDF文件第4页 
SS22S, SS23S, SS24S  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• High efficiency  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
DO-214AC (SMA)  
• Not recommended for PCB bottom side wave mounting  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
VRRM  
IFSM  
20 V, 30 V, 40 V  
40 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
VF at IF = 2.0 A  
0.517 V  
TJ max.  
Package  
150 °C  
DO-214AC (SMA)  
Single  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
Diode variations  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS22S  
22S  
SS23S  
23S  
30  
SS24S  
24S  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
20  
40  
V
A
2.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
A
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
T
J, TSTG  
-55 to +150  
Revision: 28-Apr-14  
Document Number: 89008  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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