SS22F THRU SS220F
星合 子
XINGHE ELECTRONICS
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 2.0A
SMBF
Cathode Band
Top View
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
0.145(3.70)
0.137(3.50)
0.087(2.20)
0.075(1.90)
• Low power loss, high efficiency
• High forward surge current capability
0.174(4.40)
0.166(4.20)
0.012(0.30)
0.006(0.15)
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
0.055(1.40)
0.043(1.10)
0.047(1.20)
0.028(0.70)
MECHANICAL DATA
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 57mg / 0.002oz
0.217(5.50)
0.201(5.10)
Dimensions in inches and (millimeters)
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25°Cambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Symbols
SS22F
20
SS24F
40
SS26F
60
SS28F
80
SS210F SS212F SS215F SS220F
Units
V
Parameter
Maximum Repetitive Peak Reverse Voltage
VRRM
VRMS
VDC
100
70
120
84
150
105
150
200
140
200
Maximum RMS voltage
14
28
42
56
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
20
40
60
80
100
120
V
IF(AV)
2.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
IFSM
VF
IR
50
40
A
V
Max Instantaneous Forward Voltage at 2 A
0.55
0.70
0.85
80
0.95
Maximum DC Reverse Current Ta = 25°C
0.5
10
0.3
5
mA
at Rated DC Reverse Voltage
Ta =100°C
Typical Junction Capacitance 1)
pF
°C
°C
220
Cj
Tj
Operating Junction Temperature Range
Storage Temperature Range
1)
-55 ~ +125
-55 ~ +150
Tstg
Measured at 1MHz and applied reverse voltage of 4 V D.C.
1
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