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SS18 PDF预览

SS18

更新时间: 2024-09-30 22:42:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管
页数 文件大小 规格书
6页 237K
描述
1.0 Ampere Schottky Barrier Rectifiers

SS18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DO-214
包装说明:SMA, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1102145Samacsys Pin Count:2
Samacsys Part Category:Schottky DiodeSamacsys Package Category:Diodes Moulded
Samacsys Footprint Name:do-214acSamacsys Released Date:2020-02-16 02:47:02
Is Samacsys:N其他特性:FREE WHEELING DIODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:1.1 W认证状态:Not Qualified
最大重复峰值反向电压:80 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SS18 数据手册

 浏览型号SS18的Datasheet PDF文件第2页浏览型号SS18的Datasheet PDF文件第3页浏览型号SS18的Datasheet PDF文件第4页浏览型号SS18的Datasheet PDF文件第5页浏览型号SS18的Datasheet PDF文件第6页 
SS12 - S100  
Features  
Glass passivated junctions.  
High current capability, low VF.  
For use in low voltage, high  
frequency inverters free  
wheeling, and polarity  
SMA/DO-214AC  
COLOR BAND DENOTES CATHODE  
protection applications.  
1.0 Ampere Schottky Barrier Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
IF(AV)  
Parameter  
Value  
1.0  
Units  
A
Average Rectified Current  
.375 " lead length @ TA = 75°C  
Non-repetitive Peak Forward Surge Current  
8.3 ms single half-sine-wave  
IFSM  
PD  
40  
A
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
1.1  
11  
88  
W
Derate above 25°C  
mW/°C  
°C/W  
Thermal Resistance, Junction to Ambient **  
RθJA  
Tstg  
TJ  
Storage Temperature Range  
Operating Junction Temperature  
-65 to +150  
-65 to +125  
°C  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
**Device mounted on FR-4 PCB 0.013 mm.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Device  
Units  
12 13 14 15 16 18 19 100  
20 30 40 50 60 80 90 100  
14 21 28 35 42 56 64 71  
20 30 40 50 60 80 90 100  
VRRM  
VRMS  
VR  
Maximum Repetitive Reverse Voltage  
Maximum RMS Voltage  
DC Reverse Voltage (Rated VR)  
V
V
V
IRM  
Maximum Instantaneous Reverse Current  
0.2  
mA  
10  
mA  
TA = 25°C (Note 1) @ rated VR  
TA = 100°C  
VFM  
Maximum Instantaneous Forward Voltage @ 1.0 A  
500  
700  
850  
mV  
Note: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
SS12-S100, Rev. A1  
2001 Fairchild Semiconductor Corporation  

SS18 替代型号

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