SS12 - SS110
1.0 AMP. Surface Mount Schottky Barrier Rectifiers
SMA/DO-214AC
D A Y A
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Features
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For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
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High temperature soldering:
260oC / 10 seconds at terminals
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High reliability grade (AEC Q101 qualified)
Mechanical Data
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Case: JEDEC SMA/DO-214AC Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.066 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SS SS SS SS SS SS
SS
Type Number
Units
110
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
19
90
63
90
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
100
70
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
1.0
30
A
I(AV)
A
IFSM
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 1.0A @ 25oC
@ 100oC
0.5
0.4
0.75
0.65
0.80
0.70
0.1
2.0
VF
IR
V
Maximum DC Reverse Current
@ TA =25 oC at
0.4
mA
mA
Rated DC Blocking Voltage @ TA=125 oC
10
5.0
Maximum DC Reverse Current at VR=33V
& TA=50 oC
Typical Junction Capacitance (Note 3)
-
5.0
uA
pF
HTIR
Cj
50
Typical Thermal Resistance ( Note 2 )
R
28
88
oC/W
ΘJL
R
θJA
Operating Temperature Range
Storage Temperature Range
TJ
-65 to +125
-65 to +150
-65 to +150
oC
oC
TSTG
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
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