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SS150TI60110 PDF预览

SS150TI60110

更新时间: 2024-01-19 23:03:48
品牌 Logo 应用领域
力特 - LITTELFUSE 测试光电二极管
页数 文件大小 规格书
3页 155K
描述
Rectifier Diode, Schottky, 1 Phase, 3 Element, 10A, 600V V(RRM), Silicon Carbide,

SS150TI60110 技术参数

生命周期:Active包装说明:R-PDFP-F6
Reach Compliance Code:compliant风险等级:5.76
其他特性:PD-CASE应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SEPARATE, 3 ELEMENTS
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.8 VJESD-30 代码:R-PDFP-F6
元件数量:3相数:1
端子数量:6最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLATPACK最大功率耗散:60 W
最大重复峰值反向电压:600 V最大反向电流:50 µA
反向测试电压:600 V子类别:Other Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

SS150TI60110 数据手册

 浏览型号SS150TI60110的Datasheet PDF文件第2页浏览型号SS150TI60110的Datasheet PDF文件第3页 
SS150TA60110, SS150TC60110, SS150TI60110  
VRRM = 600 V  
Silicon Carbide Schottky Diode  
IF(AVG) = 10 A  
CJ = 80 pF  
Part Number  
VRRM (V)  
IF(AVG) (A) Configuration  
SS150TA60110  
SS150TC60110  
SS150TI60110  
600  
10  
10  
10  
Triple Common Anode  
600  
Triple Common Cathode  
Triple Independent  
600  
Triple Anode (TA)  
Triple Cathode (TC)  
Triple Independent (TI)  
A = Anode C = Cathode  
Features  
Symbol Parameter  
Test Conditions  
Maximum Ratings  
600 V SiC Schottky Diode  
Surface Mount Package  
VRRM  
Repetitive Peak Reverse Voltage  
600  
600  
600  
10  
V
V
V
A
Repetitive Surge Reverse Voltage  
DC Blocking Voltage  
Zero Reverse Recovery  
VRSM  
VDC  
Zero Forward Recovery  
High Frequency Operation  
Temperature Independent Behavior  
Positive Temperature Coefficient for V  
Average Forward Current  
IF(AVG)  
TJ = 175  
°
C
F
TVJ = 45  
°
C, tP = 10 ms  
Repetitive Peak Forward Surge Current  
Operating Virtual Junction Temperature  
25  
A
IFRM  
TVJ  
Half Sine Wave D = 0.3  
Applications  
MHz Switch Mode Power Supplies  
High Frequency Converters  
Resonant Converters  
-55 to +175  
°C  
TSTG  
PTOT  
Storage Temperature  
-55 to +175  
60  
°C  
W
Rectifier Circuits  
TC = 25 °C (20 W/device)  
Symbol  
Parameter  
Test Conditions  
Characteristic Values  
TJ = 25°C unless otherwise specified  
Typ.  
Max. Units  
Forward Voltage  
VF  
IF = 5 A, TJ = 25  
°C  
1.6  
2
1.8  
V
2.4  
TJ = 175  
°C  
Reverse Current  
IR  
VR = 600 V, TJ = 25  
°C  
10  
20  
50  
µA  
200  
TJ = 175  
°C  
Junction Capacitance  
f = 1 MHz,  
VR = 0 V  
VR = 200 V  
VR = 600 V  
485  
85  
80  
CJ  
pF  
Thermal Resistance  
2.5  
°C/W  
°C  
RTHJC  
Lead Soldering Temperature  
1.6 mm (0.063 in) from case for 10 s  
300  
TL  
Pin to Substrate  
Isolation  
>1800  
>1500  
V
RMS  
Pin to Pin  
2
g
Weight  

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