SS1150F - SS1200F
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 150 - 200V
CURRENT: 1.0 A
Features
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Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
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For Use in Low Voltage Application
Guard Ring Die Construction
B
Plastic Case Material has UL Flammability
C
E
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Classification Rating 94V-O
Mechanical Data
SMAF
Dim Min Max Typ
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Case: SMAF,Molded Plastic
D
A
B
C
D
E
H
L
4.75 4.85
3.68 3.72
4.80
3.70
2.60
1.00
H
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
2.57
2.63
L
0.097 1.03
1.38 1.42 1.40
0.13 0.17 0.15
0.63 0.67 0.65
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Polarity:Color band denotes cathode end
Mounting Position:Any
E
All Dimensions in mm
Weight:0.0018 ounce, 0.064 grams
!
A
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol
Characteristic
SS1150F
SS1200F
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
150
105
150
200
140
200
Volts
Volts
Volts
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
I(AV)
1.0
Amp
Peak forward surge current
IFSM
30.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.85
Maximum instantaneous forward voltage at 1.0A
0.95
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
TA=100 C
Typical junction capacitance (NOTE 1)
90
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
88.0
-50 to +150
TJ,
Storage temperature range
C
TSTG
-50 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
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