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SS12-L PDF预览

SS12-L

更新时间: 2024-01-25 19:51:16
品牌 Logo 应用领域
美高森美 - MICROSEMI 光电二极管
页数 文件大小 规格书
3页 42K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN

SS12-L 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:DO-214AC包装说明:R-PDSO-C2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.09配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:80 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SS12-L 数据手册

 浏览型号SS12-L的Datasheet PDF文件第2页浏览型号SS12-L的Datasheet PDF文件第3页 
21201 Itasca St.  
SS12-L  
thru  
Chatsworth, CA 91311  
Phone: (818) 701-4933  
Fax: (818) 701-4939  
SS110-L  
Features  
Low Profile Package  
1 Amp Schottky  
Rectifier  
Guard Ring Protection  
Low Forward Voltage  
High Current Capability  
Extremely Low Thermal Resistance  
Low Leakage Available With Suffix TS01 (i.e. SS12-LTS01)  
20 - 100 Volts  
DO-214AC  
(SMAJ)  
Maximum Ratings  
Operating Temperature: -65°C to +125°C  
Storage Temperature: -65°C to +150°C  
Maximum Thermal Resistance; 13°C/W Junction To Lead  
H
Cathode Band  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
20V  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
Microsemi  
Part Number  
Device  
Marking  
J
SS12-L  
SS13-L  
SS14-L  
SS15-L  
SS16-L  
SS18-L  
SS110-L  
SS12  
SS13  
SS14  
SS15  
SS16  
SS18  
SS110  
14V  
21V  
28V  
35V  
42V  
56V  
70V  
30V  
40V  
50V  
60V  
80V  
100V  
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
Current  
IF(AV)  
1.0A  
TJ = 75°C  
INCHES  
MIN  
.078  
.081  
---  
MM  
MIN  
1.98  
2.06  
---  
---  
.76  
1.65  
4.93  
3.99  
2.57  
DIM  
A
B
C
D
E
F
G
H
J
MAX  
.095  
.087  
.005  
.02  
.060  
.084  
.228  
.177  
.110  
MAX  
2.42  
2.21  
.127  
.51  
NOTE  
1
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
---  
Maximum  
Instantaneous Forward  
Voltage  
.030  
.065  
.205  
.157  
.100  
1.52  
2.13  
5.79  
4.50  
2.79  
SS12-SS14  
SS15-SS16  
VF  
.55V  
.70V  
.85V  
IFM = 1.0A;  
TJ = 25°C*  
SS18-SS110  
Maximum DC Reverse  
Current At Rated DC  
Blocking Voltage  
-LTS01  
SUGGESTED SOLDER  
PAD LAYOUT  
IR  
0.5mA  
20mA  
0.3mA  
TA = 25°C  
TA = 100°C  
0.085”  
Typical Junction  
Capacitance  
SS12  
0.095”  
CJ  
230pF  
50pF  
Measured at  
1.0MHz, VR=4.0V  
SS13-SS110  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
0.075”  

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