Datasheet > SS115F

SS115F

更新时间： 2025-07-20 18:52:23

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
页数	文件大小	规格书
6页	4576K
描述
PIV (V) : 150; IO (A) : 1.0; VFM (V) : 0.95; IR (uA) : 100; Package Outline : SMAF;

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中文翻译

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数据手册

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SS115F 数据手册

DONGGUAN NANJING ELECTRONICS LTD.,

SMAF Plastic-Encapsulate Diodes

Schottky Rectifier Diodes

SS12F THRU SS120F

Features

●

SMAF

F(AV)

RRM

20V-200V

●High surge current capability

Polarity: Color band denotes cathode

●

Applications

●

Rectifier

Marking

●

SS1X

X From 2 To 20

Limiting Values(Absolute Maximum Rating)

SS1

Item

Symbol

Unit

Test Conditions

2F 3F 4F 5F 6F 8F 10F 15F 20F

V_RRM

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

20 30 40 50 60 80 100 150 200

RMS

14 21 28 35 42 56

105 140

60Hz Half-sine wave，

Resistance load

Average Forward Current

I_F(AV)

1.0

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

I_FSM

Junction Temperature

Storage Temperature

T_J

℃

-55~+125

-55~+150

-55 ~ +150

T_STG

Electrical Characteristics (T =25℃ Unless otherwise specified）

SS1

Item

Symbol Unit

Test Condition

4F 5F

8F 10F 15F 20F

2F 3F

V_F

I_F=1.0A

Peak Forward Voltage

Peak Reverse Current

0.55

0.70

0.85

0.95

I_RRM1

I_RRM2

T =25℃

0.5

0.1

V_RM=V_RRM

T =100℃

5.0

R_θ

Between junction and ambient

Between junction and terminal

J-A

℃/

Thermal

Resistance(Typical)

R_θ

9.5

J-L

Measured at 1MHZ and Applied

Reverse Voltage of 4.0 V.D.C

Juction Capacitance

(Typical)

Notes:

Thermal resistance from junction to ambient and from juction to lead mounted on FR4 PCB double sided copper mini pad

Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

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中文翻译

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