Datasheet > SS1150-T3

SS1150-T3

更新时间： 2024-09-17 20:45:59

品牌	Logo	应用领域
WTE		瞄准线光电二极管
页数	文件大小	规格书
4页	40K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN

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数据手册

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SS1150-T3 数据手册

SS1150 – SS1200

1.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE

WON-TOP ELECTRONICS

Features



Low Forward Voltage



Epitaxial Construction with Oxide Passivation

Guard Ring for Transient and ESD Protection

Surge Overload Rating to 30A Peak

Low Power Loss

Fast Switching

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

SMA/DO-214AC

Min

Mechanical Data

Dim

Max

2.92

4.60

1.90

0.305

5.30

2.44

0.203

1.52



Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

2.29

4.00

1.27



Polarity: Cathode Band or Cathode Notch

Marking: Device Code, See Page 3

Weight: 0.064 grams (approx.)

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

0.152

4.80

2.00

0.051

0.76

All Dimensions in mm

Maximum Ratings @T_A=25°C unless otherwise specified

Characteristic

Symbol

SS1150

SS1200

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

150

105

200

RMS Reverse Voltage

VR(RMS)

140

Average Rectified Output Current (Note 1)

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

Forward Voltage

@I_F= 1.0A

VFM

IRM

0.9

Peak Reverse Current

At Rated DC Blocking Voltage

@T_J= 25°C

@T_J= 100°C

0.2

2.0

Typical Junction Capacitance (Note 2)

Thermal Resistance, Junction to Ambient (Note 1)

Thermal Resistance, Junction to Lead (Note 1)

RθJA

RθJL

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Mounted on FR-4 PCB with 5.0 x 5.0mm copper pads.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: September, 2012

www.wontop.com

12 3 4

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