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SS1150-L-TP-HF PDF预览

SS1150-L-TP-HF

更新时间: 2024-11-07 18:24:35
品牌 Logo 应用领域
美微科 - MCC 测试光电二极管
页数 文件大小 规格书
3页 287K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 150V V(RRM),

SS1150-L-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.67
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.9 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:150 V最大反向电流:50 µA
反向测试电压:150 V表面贴装:YES
技术:SCHOTTKY端子形式:C BEND
端子位置:DUALBase Number Matches:1

SS1150-L-TP-HF 数据手册

 浏览型号SS1150-L-TP-HF的Datasheet PDF文件第2页浏览型号SS1150-L-TP-HF的Datasheet PDF文件第3页 
M C C  
SS1150-L  
THRU  
SS1200-L  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Low Forward Voltage  
Guard Ring Protection  
High Current Capability  
1 Amp Schottky  
Rectifier  
·
150 to 200 Volts  
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
DO-214AC  
Maximum Ratings  
Operating Temperature: -50°C to +150°C  
(SMA) (LEAD FRAME)  
Storage Temperature: -65°C to +150°C  
Maximum Thermal Resistance; 50°C/W Junction To Lead  
H
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
150V  
J
SS1150-L  
SS1200-L  
S1150  
S1200  
150V  
200V  
120V  
140V  
200V  
A
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
E
D
Average Forward  
Current  
IF(AV)  
1.0A  
B
TJ = 100°C  
F
G
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
Instantaneous  
Forward Voltage  
INCHES  
MIN  
.079  
.050  
.002  
---  
.030  
.065  
.189  
.157  
.090  
MM  
MIN  
2.00  
1.27  
.05  
---  
.76  
1.65  
4.80  
4.00  
2.25  
DIM  
A
B
C
D
E
MAX  
.096  
.064  
.008  
.02  
.060  
.091  
.220  
.181  
.115  
MAX  
2.44  
1.63  
.20  
NOTE  
SS1150  
SS1200  
VF  
.90V  
.92V  
IFM = 1.0A;  
TJ = 25°C*  
.51  
1.52  
2.32  
5.59  
4.60  
2.92  
F
G
H
J
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
0.05mA  
1mA  
TA = 25°C  
TA = 100°C  
SUGGESTED SOLDER  
PAD LAYOUT  
0.090”  
Typical Junction  
Capacitance  
CJ  
110pF  
Measured at  
1.0MHz, VR=4.0V  
0.085”  
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
0.070”  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/02/01  

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