Datasheet > SS1150

SS1150

更新时间： 2024-09-17 12:57:11

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	309K
描述
1A Patch Schottky diode 150V SMA series

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中文翻译

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数据手册

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SS1150 数据手册

SS1150 - SS1200

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 150 - 200V

CURRENT: 1.0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

SMA(DO-214AC)

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Classification Rating 94V-O

Dim

MinMax

Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

Characteristic

SS1150

SS1200

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

150

105

150

200

140

200

Volts

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

at TL(see fig.1)

I(AV)

1.0

Amp

Peak forward surge current

IFSM

30.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.85

Maximum instantaneous forward voltage at 1.0A

0.95

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.2

2.0

TA=100 C

Typical junction capacitance (NOTE 1)

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJA

88.0

-50 to +150

TJ,

Storage temperature range

TSTG

-50 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

1 of 2

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