Datasheet > SS115

SS115

更新时间： 2024-09-18 14:51:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	712K
描述
SMAJ

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中文翻译

获取价格

数据手册

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SS115 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SMAJ Plastic-Encapsulate Diodes

SS12 THRU SS120

Schottky Rectifier Diodes

Features

●

F(AV)

SMAJ

20V-200V

VRRM

● High surge current capability

●

Polarity: Color band denotes cathode

Applications

●

Rectifier

Marking

●

SS1X

From 2 To 20

Limiting Values(Absolute Maximum Rating)

SS1

Item

Symbol

Unit

Test Conditions

10 15

V_RRM

Repetitive Peak Reverse Voltage

20 30 40 50 60 80 100 150 200

MaximumRMS Voltage

RMS

14 21 28 35 42 56

105 140

60Hz Half-sine wave，

Resistance load，FIG.1

Average Forward Current

I_F(AV)

1.0

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

I_FSM

Junction Temperature

Storage Temperature

T_J

℃

-55~+125

-55~+150

-55 ~ +150

T_STG

Electrical Characteristics (T =25℃ Unless otherwise specified）

SS1

Item

Symbol Unit

Test Condition

V_F

I_F=1.0A

Peak Forward Voltage

Peak Reverse Current

0.55

0.70

0.85

0.95

I_RRM1

I_RRM2

T =25℃

0.5

0.2

V_RM=V_RRM

T =100℃

5.0

R_θ

Between junction and ambient

Between junction and terminal

J-A

℃/

Thermal

Resistance(Typical)

R_θ

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

www.jscj-elec.com

Rev. - 1.0

12 3 4

中文翻译

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