Datasheet > SS110F

SS110F

更新时间： 2024-09-25 18:04:47

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描述
Schottky Diodes

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中文翻译

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数据手册

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SS110F 数据手册

SMD Type

Diodes

Transistors

Schottky Barrier Diodes

SS12F ~ SS120F

SMAF

Ƶ Features

ƽ Metal silicon junction, majority carrier conduction

ƽ For surface mounted applications

ƽ Low power loss, high efficiency

ƽ High forward surge current capability

Top View

ƽ For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Simplified outline SMAF and symbol

PIN DESCRIPTION

DESCRIPTION

Cathode

Anode

Ƶ Absolute Maximum Ratings Ta = 25ć unless otherwise specified

12F

14F

16F

Parameter

Symbol

Unit

18F 110F 112F 115F 120F

Repetitive Peak Reverse Voltage

Surge Peak Reverse Voltage

Maximum DC Blocking Voltage

V_RRM

V_RSM

V_DC

100

120

150

105

150

200

140

200

V_F

I_O

0.55

0.7

0.85

0.9

Instantaneous Forward Voltage at 1A

Averaged Forward Current

Peak forward surge current

I_FSM

0.3

0.5

0.1

T_A=25ć

Maximum DC Reverse Current

at rated DC blocking voltage

Typical Junction Capacitance

Typical thermal resistance

Junction Temperature

I_R

T_A=100ć

C_j

R_thJA

T_j

110

ć/W

150

Storage Temperature

T_stg

-55 to 150

* 1 Measured at 1MHz and applied reverse voltage of 4V D.C

* 2. Mounted on glass epoxy PC board with 4×1.5ą×1.5ą(3.81×3.81 cm) copper pad.

Ƶ Marking

NO.

SS12F

SS12

SS14F

SS14

SS16F

SS16

SS18F

SS18

SS110F SS112F SS115F

SS110 SS112 SS115

SS120F

SS120

Marking

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中文翻译

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