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SS110BF PDF预览

SS110BF

更新时间: 2024-09-24 13:13:59
品牌 Logo 应用领域
鲁光 - LGE 肖特基二极管
页数 文件大小 规格书
2页 155K
描述
暂无描述

SS110BF 技术参数

Case Style:SMBFIF(A):1.0
Maximum recurrent peak reverse voltage:100Peak forward surge current:30
Maximum instantaneous forward voltage:0.85@IF(A):1.0
Maximum reverse current:0.5TJ(℃):/
class:Diodes

SS110BF 数据手册

 浏览型号SS110BF的Datasheet PDF文件第2页 
SS12-SS110  
Surface Mount Schottky Barrier Rectifiers  
REVERSE VOLTAGE: 20 - 100 V  
FORWARD CURRENT: 1.0 A  
(DO-214AC)SMA  
Features  
4.5± 0.1  
Schottky barrier rectifier  
Guardring protection  
Low forward voltage  
Reverse energy tested  
High current capability  
Extremely low thermal resistance  
5.1± 0.2  
Mechanical Data  
0.2± 0.05  
1.3± 0.2  
Case: SMA molded plastic body 1111  
Polarity: Color band denotes cathode end  
Mounting position: ANY  
Dimensions in millimeters  
Weight: 0.002 ounces, 0.064 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25oC ambient temperature unless otherwise specified  
UNITS  
Device marking code  
SS12 SS13 SS14 SS15 SS16 SS18 SS19 SS110  
VRRM  
VRWS  
VDC  
20  
14  
20  
30  
21  
30  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
40  
28  
40  
50  
35  
50  
60  
42  
60  
80  
56  
80  
90  
63  
90  
100  
70  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at  
TL=90  
IF(AV)  
IFSM  
VF  
1.0  
40  
A
A
Peak forward surge current 8.3ms single  
half-sine-wave  
Maximum instantaneous forward voltage  
at IFM=1.0A (NOTE1)  
0.50  
0.75  
0.85  
V
Maximum DC reverse current  
TJ=25  
0.2  
0.5  
IR  
m A  
at rated DC blocking voltage T=125  
J
6.0  
5.0  
oC/W  
oC  
Maximum thermal resistance  
Operating temperature range  
Storage temperature range  
28  
R
JL  
TJ  
-55 ---- +125  
-55 ---- +150  
oC  
TSTG  
NOTE: 1.Pulse test: Pulse width 300us,duty cycle 1 %  
http://www.luguang.cn  
mail:lge@luguang.cn  

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