Datasheet > SS110B

SS110B

更新时间： 2024-09-24 12:57:07

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森美特 - SUNMATE		/
页数	文件大小	规格书
2页	312K
描述
1A Patch Schottky diode 100V SMB series

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中文翻译

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数据手册

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SS110B 数据手册

SS12B - SS110B

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 1.0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

SMB(DO-214AA)

Classification Rating 94V-O

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Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

SS18B SS110B

Characteristic

SS12B SS13B SS14B SS15B SS16B

Unit

Symbol

100

VRRM

VRMS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

Maximum DC blocking voltage

Maximum average forward rectified current

at TL(see fig.1)

VDC

I(AV)

1.0

Peak forward surge current

IFSM

40.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

0.45

0.55

0.70

0.85

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.5

TA=100 C

6.0

5.0

°C/W

°C

Typical junction capacitance (NOTE 1)

110

R^ꢀ

Typical thermal resistance (NOTE 2)

Operating junction temperature range

88.0

-65 to +150

-65 to +125

TJ,

Storage temperature range

°C

TSTG

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

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