SS12 - SS110
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 1.0 A
Features
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Schottky Barrier Chip
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Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
For Use in Low Voltage Application
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Guard Ring Die Construction
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
SMA(DO-214AC)
Dim
MinMax
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Mechanical Data
A
B
C
D
E
G
H
J
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
C
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Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
D
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J
Weight: 0.064 grams (approx.)
G
H
E
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
SS18 SS110
Characteristic
SS12 SS13 SS14 SS15 SS16
Unit
Symbol
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
VRRM
VRMS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
VDC
I(AV)
1.0
A
A
Peak forward surge current
IFSM
VF
40.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
0.45
0.55
0.70
0.85
Maximum instantaneous forward voltage at 1.0A
V
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.5
mA
IR
TA=100 C
6.0
5.0
90
pF
°C/W
°C
Typical junction capacitance (NOTE 1)
CJ
110
Typical thermal resistance (NOTE 2)
Operating junction temperature range
88.0
-65 to +150
-65 to +150
-65 to +125
TJ,
Storage temperature range
°C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
1 of 2
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