Datasheet > SS10-G

SS10-G

更新时间： 2024-11-28 19:56:47

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
2页	110K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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SS10-G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	Base Number Matches：	1

SS10-G 数据手册

SMD Schottky Barrier Rectifier

SS22-G THRU SS210-G

Reverse Voltage: 20 ~ 100 Volts

Forward Current: 2.0 Amp

Features

ꢀ Ideal for surface mount applications

SMB/DO-214AA

ꢀ Easy pick and place

ꢀ Plastic package has Underwriteers lab.

flammability classification 94V-0

ꢀ Built-in strain relief

0.083(2.11)

0.075(1.91)

0.155(3.94)

0.130(3.30)

ꢀ Low forward voltage drop

0.185(4.70)

0.160(4.06)

0.012(0.31)

0.006(0.15)

Mechanical Data

0.096(2.44)

0.083(2.13)

ꢀ Case: JEDEC DO-214AA molded plastic

ꢀ Terminal: Solderable per MIL-STD-750

method 2026

ꢀ Polarity: Color band denotes cathode end

ꢀ Mounting position: Any

0.008(0.20)

0.203(0.10)

0.050(1.27)

0.030(0.76)

0.220(5.59)

0.200(5.08)

Dimensions in inches and (millimeter)

ꢀ Weight: 0.093 gram

Maximum Rating and Electrical Characteristics

Symbol

Parameter

Unit

SS22-G

SS24-G

SS26-G

SS210-G

VRRM

VDC

100

Max.Repetitive Peak ReverseVoltage

Max. DC BlockingVoltage

Max. RMS Voltage

VRMS

Peak Surge ForwardCurrent

8.3ms single halfsine-wave

superimposed on rateload

( JEDEC method)

IFSM

I o

V ^F

I R

2.0

Max. Average Forward Current

Max. Instantaneous ForwardCurrent

at 2.0 A

0.70

0.85

0.50

Max. DC ReverseCurrent at RatedDC

Blocking Voltage

Ta=25

0.5

Ta=100

Max. Thermal Resistance(Note 1)

C/W

- 5 0 t o + 1 2 5

- 6 5 t o + 1 5 0

T j

T^STG

Operating Junction temperature

Storage Temperature

Note 1: Thermalresistance from junctionto ambient andjunction to tolead P.C.B. Mounted on0.2 x 0.2copper pad areas

“-G” suffix designates RoHS compliant Version

中文翻译

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