Datasheet > SRP2010-R68M

SRP2010-R68M

更新时间： 2024-11-27 02:47:47

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
4页	232K
描述
SRP2010 Series - SMD Power Inductors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SRP2010-R68M 数据手册

Features

Applications

■ Wirewound construction

■ Iron powder core

■ DC/DC converters for:

- Smart phones

- DVC/DSCs

■ Magnetically shielded construction

provides low radiation

■ Low DC resistance

■ Low proﬁle

- Tablets

- HDD/SSDs

- Mobile electronic devices

■ RoHS compliant*

SRP2010 Series - SMD Power Inductors

Electrical Speciﬁcations @ 25 °C

General Speciﬁcations

Inductance Test Frequency/

Voltage ...............................1 MHz/1 V

Operating Temperature

................................-40 °C to +125 °C

(Temperature rise included)

Storage Temperature

................................-50 °C to +125 °C

Rated Current

............ Inductance drops 30 % at Isat

Temperature Rise .....40 °C at rated Irms

Resistance to Soldering Heat....+260 °C

Inductance

@ 1 MHz / 1 V

Irms

(A)

Bourns

Part Number

DCR

(mΩ) Max.

Isat

(A)

L (μH)

0.24

0.33

0.47

0.68

1.0

Tol. (%)

SRP2010-R24M

SRP2010-R33M

SRP2010-R47M

SRP2010-R68M

SRP2010-1R0M

SRP2010-1R5M

SRP2010-2R2M

4.5

3.8

3.3

3.1

2.6

1.9

1.7

5.6

5.0

4.4

3.7

2.9

2.5

1.9

1.5

137

150

2.2

Materials

How to Order

Electrical Schematic

Core.....................................Iron powder

Terminal.........................................Ni/Sn

Packaging....... 3000 pcs. per 7-inch reel

SRP2010 - 1R0M

Model

Value Code (see table)

Product Dimensions

Soldering Proﬁle

1.0

MAX.

(.0398

CRITICAL

ZONE

to T

RAMP-UP

0.5 0.3

(.020 + .0128

0.5 0.3

(.020 + .0128

2.0 0.2

smax

(.079 .00ꢀ8

smin

1.6 0.2

(.063 .00ꢀ8

RAMP-DOWN

Preheat

Recommended Layout

25 °C to Peak

Time (Seconds8

0.9

(.0358

Proﬁle Feature

Pb Free Assembly

Average Ramp Rate (T

Preheat

to T )

3 °C/second max.

Smax

1.6

(.0638

- Temperature Min. (T

- Temperature Max. (T

)

150 °C

200 °C

60-180 seconds

Smin

)

Smax

)

- Time (t

to t

smin

smax

Time Maintained Above

- Temperature (T )

2.0

(.0798

217 °C

60-150 seconds

- Time (t )

Peak Temperature (T )

260 °C +0/-5 °C

(INCHES8

DIMENSIONS:

Time within 5 °C of Actual Peak Temperature

(T )

20-40 seconds

6 °C/second max.

8 minutes max.

Ramp-Down Rate

Time 25 °C to Peak Temperature

*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June ꢀ, 2011.

Speciﬁcations are subject to change without notice. Users should verify actual device performance in their speciﬁc

applications. The products described herein and this document are subject to speciﬁc legal disclaimers as set forth on the

last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.

WARNING Cancer and Reproductive Harm

www.P65Warnings.ca.gov

12 3 4

中文翻译

下载PDF

与SRP2010-R68M相关器件

型号	品牌	获取价格	描述	数据表
SRP2313AA	BOURNS	获取价格	Shielded Power Inductors
SRP2313AA-100M	BOURNS	获取价格	General Purpose Inductor,
SRP2313AA-1R0M	BOURNS	获取价格	Shielded Power Inductors
SRP2313AA-1R5M	BOURNS	获取价格	General Purpose Inductor,
SRP2313AA-220M	BOURNS	获取价格	General Purpose Inductor,
SRP2313AA-230M	BOURNS	获取价格	General Purpose Inductor,
SRP2313AA-2R2M	BOURNS	获取价格	暂无描述
SRP2313AA-330M	BOURNS	获取价格	General Purpose Inductor,
SRP2313AA-3R3M	BOURNS	获取价格	Shielded Power Inductors
SRP2313AA-470M	BOURNS	获取价格	Shielded Power Inductors

与SRP2010-R68M相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

43
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

58

产品中心

服务支持

精选活动

关于我们

帮助中心

SRP2010-R68M

SRP2010-R68M 数据手册

与SRP2010-R68M相关器件

与SRP2010-R68M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SRP2010-R68M

SRP2010-R68M 数据手册

与SRP2010-R68M相关器件

与SRP2010-R68M相关文章

您还可以找

您在本页遇到什么问题？