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SRF820H PDF预览

SRF820H

更新时间: 2024-10-01 09:07:03
品牌 Logo 应用领域
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页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

SRF820H 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CXFM-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.65
Is Samacsys:N外壳连接:EMITTER
最大集电极电流 (IC):8 A基于收集器的最大容量:80 pF
集电极-发射极最大电压:30 V配置:Single
最小直流电流增益 (hFE):20最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:O-CXFM-F6端子数量:6
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):220 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:UNSPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

SRF820H 数据手册

  
SRF820H  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI SRF820H is Designed for  
High Power Class C Amplifier  
applications, in 225 to 400 MHz  
Military Communication Equipment.  
PACKAGE STYLE .500 6L FLG  
A
C
4
1
2x ØN  
FULL R  
FEATURES:  
D
G
Internal Input Matching Network  
PG = 8.4 dB at 70 W/400 MHz  
Omnigold™ Metalization System  
Available in matched pairs and  
quads  
2
3
B
E
.725/18,42  
F
M
K
H
I
L
J
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
MAXIMUM RATINGS  
.150 / 3.43  
.160 / 4.06  
A
B
C
D
E
F
G
H
I
.045 / 1.14  
8.0 A  
60 V  
IC  
.210 / 5.33  
.835 / 21.21  
.200 / 5.08  
.490 / 12.45  
.003 / 0.08  
.220 / 5.59  
.865 / 21.97  
.210 / 5.33  
.510 / 12.95  
.007 / 0.18  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
30 V  
.125 / 3.18  
.725 / 18.42  
4.0 V  
.970 / 24.64  
.090 / 2.29  
.150 / 3.81  
.980 / 24.89  
.105 / 2.67  
.170 / 4.32  
.285 / 7.24  
.135 / 3.43  
J
K
L
220 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
1.25 °C/W  
M
N
.120 / 3.05  
TSTG  
θJC  
1 = COLLECTOR  
2 = BASE  
3 & 4 = EMITTER  
ORDER CODE: ASI10474  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IE = 10 mA  
30  
V
60  
BVCBO  
BVEBO  
ICBO  
V
4.0  
V
V
CB = 30 V  
CE = 5.0 V  
5.0  
80  
mA  
---  
V
IC = 2.0 A  
20  
hFE  
VCB = 28 V  
VCC = 28 V  
f = 1.0 MHz  
f = 400 MHz  
80  
COB  
pF  
8.4  
70  
PG  
dB  
W
PIN = 70 W  
POUT  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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