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SRF2035 PDF预览

SRF2035

更新时间: 2024-01-28 01:32:43
品牌 Logo 应用领域
统懋 - MOSPEC 局域网功效瞄准线二极管
页数 文件大小 规格书
2页 147K
描述
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

SRF2035 技术参数

生命周期:Contact Manufacturer包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.18
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.57 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:35 V最大反向电流:500 µA
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

SRF2035 数据手册

 浏览型号SRF2035的Datasheet PDF文件第2页 
MOSPEC  
SRF2030 thru SRF2060  
Switchmode  
Full Plastic Dual Schottky Barrier Power Rectifiers  
Ultrafast Power  
RECTIFIERS  
Using the Schottky Barrier principle with a Molybdenum barrier metal.  
These state-of-the-art geometry features epitaxial construction with oxide  
passivation and metal overlay contact. Ideally suited for low voltage, high  
frequency rectification, or as free wheeling and polarity protection diodes.  
10 AMPERES  
50~200 VOLTS  
Features  
Low Forward Voltage.  
Low Switching noise.  
High Current Capacity  
Guarantee Reverse Avalanche.  
Guard-Ring for Stress Protection.  
Low Power Loss & High efficiency.  
150Operating Junction Temperature  
Low Stored Charge Majority Carrier Conduction.  
Plastic Material used Carries Underwriters Laboratory  
ITO-220AB  
Flammability Classification 94V-O  
ESD: 8KV(Min.) Human-Body Model  
In compliance with EU RoHs 2002/95/EC directives  
Mark code : NXX, PXX.  
MAXIMUM RATINGS  
SRF20  
30 35 40 45 50 60  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM 30 35 40 45 50 65  
VR  
V
RMS Reverse Voltage  
VR(RMS) 21 25 28 32 35 46  
V
A
MILLIMETERS  
DIM  
MIN  
MAX  
Average Rectifier Forward Current ( Per diode )  
Total Device (Rated VR), TC=125℃  
10  
20  
IF(AV)  
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
14.80  
12.75  
9.9  
16.0  
13.8  
10.3  
6.80  
3.50  
1.45  
1.45  
0.90  
2.70  
3.30  
1.30  
0.80  
4.80  
1.80  
3.50  
3.15  
3.50  
3.80  
Peak Repetitive Forward Current  
(Rate VR, Square Wave, 20kHz)  
IFM  
20  
200  
A
A
6.35  
2.50  
1.00  
1.00  
0.30  
2.30  
2.40  
0.55  
0.45  
4.20  
1.10  
2.90  
2.50  
2.90  
3.10  
Non-Repetitive Peak Surge Current (Surge  
applied at rate load conditions halfware, single  
phase, 60Hz)  
IFSM  
Operating and Storage Junction Temperature  
Range  
TJ , Tstg  
-65 to +150  
THERMAL RESISTANCES  
Typical Thermal Resistance junction to case  
Rθjc  
Rθ c  
Per diode  
Total  
Coupling  
3.8  
3.4  
3.0  
/w  
ELECTRIAL CHARACTERISTICS  
SRF20  
Characteristic  
Symbol  
Unit  
30 35 40 45 50 60  
Maximum Instantaneous Forward Voltage  
( IF =10 Amp TC = 25)  
( IF =10 Amp TC = 100)  
VF  
0.55  
0.48  
0.70  
0.60  
V
Maximum Instantaneous Reverse Current  
( Rated DC Voltage, TC = 25)  
( Rated DC Voltage, TC = 100)  
IR  
0.06  
20  
mA  

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