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SRC1210M PDF预览

SRC1210M

更新时间: 2024-11-01 12:20:23
品牌 Logo 应用领域
可天士 - KODENSHI 晶体晶体管
页数 文件大小 规格书
4页 155K
描述
NPN Silicon Transistor

SRC1210M 数据手册

 浏览型号SRC1210M的Datasheet PDF文件第2页浏览型号SRC1210M的Datasheet PDF文件第3页浏览型号SRC1210M的Datasheet PDF文件第4页 
SRC1210M  
NPN Silicon Transistor  
PIN Connection  
Descriptions  
Switching application  
OUT  
Interface circuit and driver circuit application  
Features  
IN  
R1  
With built-in bias resistor  
Simplify circuit design  
Reduce a quantity of parts and  
manufacturing process  
High packing density  
R1 = 4.7KΩ  
1 2 3  
COMMON  
Ordering Information  
Type NO.  
Marking  
Package Code  
SRC1210M  
1210  
TO-92M  
Absolute Maximum Ratings  
Characteristic  
(Ta=25°C)  
Symbol  
Rating  
50  
Unit  
Output voltage  
VO  
VI  
V
V
Input voltage  
20, -5  
100  
Output current  
IO  
mA  
mW  
°C  
Power dissipation  
PD  
TJ  
400  
Junction temperature  
Storage temperature range  
150  
Tstg  
-55 ~ 150  
°C  
Electrical Characteristics  
Characteristic  
(Ta=25°C)  
Symbol  
IO(OFF)  
GI  
Test Condition  
Min. Typ. Max. Unit  
Output cut-off current  
VO=50V, VI=0  
-
120  
-
-
500  
nA  
DC current gain  
VO=5V, IO=10mA  
IO=10mA, II=0.5mA  
VO=0.2V, IO=5mA  
VO=5V, IO=0.1mA  
VO=10V, IO=5mA, f=1MHz  
VI=5V, IO=0  
-
-
-
Output voltage  
VO(ON)  
VI(ON)  
VI(OFF)  
fT*  
0.1  
0.8  
0.55  
200  
-
0.3  
1.2  
-
V
Input voltage (ON)  
-
V
Input voltage (OFF)  
Transition frequency  
Input current  
0.3  
-
V
-
MHz  
mA  
KΩ  
II  
-
1.8  
6.1  
Input resistor (Input to base)  
* : Characteristic of transistor only  
R1  
-
3.3  
4.7  
KSD-R0B008-000  
1

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