SR704

更新时间： 2024-11-20 22:21:27

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	39K
描述
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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中文翻译

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技术参数
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SR704 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.83

SR704 数据手册

polyfet rf devices

SR704

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

SILICON GATE ENHANCEMENT MODE

RF POWER VDMOS TRANSISTOR

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

300.0 Watts Push - Pull

Package Style AR

"Polyfet" process features

low feedback and output capacitances

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

resulting in high F transistors with high

input impedance and high efficiency.

25 C )

ABSOLUTE MAXIMUM RATINGS ( T =

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Storage

Temperature

C/W

20.0

350 Watts

200 C

-65 C to 150 C

70V

20 V

0.50

RF CHARACTERISTICS (

300.0 WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Idq = 1.20 A, Vds = 28.0 V, F = 175

Gps

Common Source Power Gain

Drain Efficiency

MHz

Idq =

1.20

A, Vds = 28.0 V, F = 175 MHz

Idq = 1.20

A, Vds = 28.0 V, F = 175

MHz

VSWR

Load Mismatch Tolerance

20:1

Relative

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Drain Breakdown Voltage

Ids = 80.00 mA, Vgs = 0V

Vds =

Bvdss

Idss

4.0

Zero Bias Drain Current

Gate Leakage Current

28.0 V, Vgs = 0V

Igss

Vgs

Vds = 0V Vgs = 30V

Gate Bias for Drain Current

Ids = 0.40 A, Vgs = Vds

4.8

Forward Transconductance

Saturation Resistance

Mho

Vds = 10V, Vgs = 5V

Rdson

Ohm

Vgs = 20V, Ids =10.00 A

0.25

28.00

200.0

12.0

Idsat

Ciss

Crss

Coss

Saturation Current

Amp

Vgs = 20V, Vds = 10V

28.0 Vgs = 0V, F = 1 MHz

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Vds =

28.0 Vgs = 0V, F = 1 MHz

128.0

REVISION 03/28/2001

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

中文翻译

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与SR704相关器件

型号	品牌	获取价格	描述	数据表
SR7040C	RECTRON	获取价格	Reverse Voltage Vr : 40 V;Forward Current Io : 70 A;Max Surge Current : 600 A;Forward Volt
SR7045C	RECTRON	获取价格	Reverse Voltage Vr : 45 V;Forward Current Io : 70 A;Max Surge Current : 600 A;Forward Volt
SR704U	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
SR705	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
SR7050C	RECTRON	获取价格	Reverse Voltage Vr : 50 V;Forward Current Io : 70 A;Max Surge Current : 600 A;Forward Volt
SR706	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
SR7060C	RECTRON	获取价格	Reverse Voltage Vr : 60 V;Forward Current Io : 70 A;Max Surge Current : 600 A;Forward Volt
SR7080C	RECTRON	获取价格	Reverse Voltage Vr : 80 V;Forward Current Io : 70 A;Max Surge Current : 450 A;Forward Volt
SR70-LF	PROTEC	获取价格	暂无描述
SR70-LF-T13	PROTEC	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 4 Element, Silicon, ROHS AND REACH COMPLIA

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