Datasheet > SR230S

SR230S

更新时间： 2024-10-02 14:52:11

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	2207K
描述
肖特基二极管

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中文翻译

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技术参数
数据手册

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SR230S 技术参数

Case Style：	DO-41	IF（A）：	2
Maximum recurrent peak reverse voltage：	30	Peak forward surge current：	50
Maximum instantaneous forward voltage：	0.55	@IF(A)：	2
Maximum reverse current：	1	TJ(℃）：	/
class：	Diodes

SR230S 数据手册

SR220S-SR2200S

2.0 AMP Schottky Barrier Rectifiers

VOLTAGE RANGE: 20 --- 200 V

Features

CURRENT: 2.0 A

Metal-Semiconductor junction with guard ring

Epitaxial construction

DO-41

Low forward voltage drop,low switching losses

High surge capability

For use in low voltage,high frequencyinverters free

wheeling,and polarityprotection applications

The plastic material carries U/L recognition 94V-0

Mechanical Data

Case:JEDEC DO--15,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-750,Method 2026

.028(.71)

.027(.69)

Polarity: Color band denotes cathode

Weight: 0.014ounces,0.39 grams

Mounting position: Any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

SR220S SR230S SR240S SR250S SR260S SR280SSR2100SSR2150SSR2200S

UNITS

Max imum recurrent peak reverse voltage

Max imum RMS voltage

100

V_RRM

V_RMS

V_DC

MaximumDC blocking voltage

100

Maximumaverage forw ard rectified current

2.0

I_F(AV)

9.5mmlead length,

@T_A=75

Peak forw ard surge current

I_FSM

50.0

8.3ms single half-sine-w ave

superimposed on rated load @T_J=125

Maximuminstantaneous forw ard voltage

@ 2.0A (Note 1)

0.55

0.7

0.85

V_F

I_R

Maximumreverse current

@T_A=25

1.0

10.0

170

at rated DC blocking voltage @T_A=100

Typical junction capacitance (Note2)

C_J

R_θ_JA

T_J

Typical thermal resistance

(Note3)

/ W

Operating junction temperature range

Storage temperature range

- 55 ---- + 150

T_STG

NOTE: 1. Pulse test:300us pulse width,1% duty cy cle.

2. Measured at 1.0MHz and applied reverse v oltage of 4.0V DC.

3.Thermal resistance junction to ambient

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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