5秒后页面跳转
SR2150T-G PDF预览

SR2150T-G

更新时间: 2024-09-24 07:17:55
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管
页数 文件大小 规格书
5页 96K
描述
Schottky Barrier Rectifier

SR2150T-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.9 VJEDEC-95代码:DO-15
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:150 V最大反向电流:1000 µA
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SR2150T-G 数据手册

 浏览型号SR2150T-G的Datasheet PDF文件第2页浏览型号SR2150T-G的Datasheet PDF文件第3页浏览型号SR2150T-G的Datasheet PDF文件第4页浏览型号SR2150T-G的Datasheet PDF文件第5页 
Schottky Barrier Rectifier  
SR2150-G  
Forward current: 2.0A  
Reverse voltage: 150V  
RoHS Device  
DO-15  
Features  
-Metal-Semiconductor junction with gard ring.  
0.034(0.90)  
0.028(0.70)  
DIA  
-Epitaxial consturction.  
1.0(25.4) min.  
-Low forward voltage drop.  
-High current capability.  
-The plastic material carries UL recognition 94V-0  
-For use in low voltage,high frequency inverters,  
free wheeling, and polarity protection applications.  
0.300(7.60)  
0.230(5.80)  
0.140(3.60)  
DIA  
Mechanical Data  
-Case: JEDEC DO-15 molded plastic.  
0.104(2.60)  
1.0(25.4) min.  
-Polarity: color band denoted cathode end.  
-Lead: plastic axial lead, solderable per MIL-STD-  
202E, method 208C.  
-Mounting position: any.  
-Weight: 0.4 gram.  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Ratings at Ta=25°C unless otherwise noted.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derate current by 20% .  
Symbol  
SR2150-G  
Parameter  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
150  
105  
150  
2.0  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current  
@TL=75°C  
IAV  
Peak forward surge current, 8.3ms single half sine-wave  
super Imposed on rated load (JEDEC method)  
IFSM  
50  
A
V
VF  
Maximum instantaneous forward voltage at 2.0A (Note 1)  
0.90  
@ TJ=25°C  
Maximum DC reverse current  
at rated DC blocking voltage  
IR  
IR  
1.0  
20  
mA  
pF  
@ TJ=100°C  
CJ  
RθJA  
TJ  
Typical junction capacitance (Note 3)  
Typical thermal resistance (Note 2)  
Operating temperature range  
150  
35  
°C/W  
°C  
-55 ~ +150  
°C  
Storage temperature range  
Note:  
TSTG  
-55 ~ +150  
1. Pulse test: 300µs pulse width, 1% duty cycle.  
2. Thermal resistance from junction to ambient P.C.B. mounted with 0.375" (9.5mm) lead length with 1.5"×1.5"(38×38mm) copper pads.  
3. Measured at 1.0 MHZ and reverse voltage of 4.0V  
REV:A  
Page 1  
QW-BB039  

与SR2150T-G相关器件

型号 品牌 获取价格 描述 数据表
SR2150-TP-HF MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-41,
SR2-15100FZM AAC

获取价格

CURRENT SHUNT RESISTORS
SR2-1560FZM AAC

获取价格

CURRENT SHUNT RESISTORS
SR215A100JAATR1 KYOCERA AVX

获取价格

CAP CER 10PF 50V NP0 RADIAL
SR215A100JARTR1 KYOCERA AVX

获取价格

CAP CER 10PF 50V NP0 RADIAL
SR215A101FAA KYOCERA AVX

获取价格

CAP CER 100PF 50V NP0 RADIAL
SR215A101JAATR1 KYOCERA AVX

获取价格

CAP CER 100PF 50V NP0 RADIAL
SR215A101JARTR1 KYOCERA AVX

获取价格

CAP CER 100PF 50V NP0 RADIAL
SR215A101KAA KYOCERA AVX

获取价格

CAP CER 100PF 50V NP0 RADIAL
SR215A101KARTR1 KYOCERA AVX

获取价格

CAP CER 100PF 50V NP0 RADIAL