5秒后页面跳转
SR2150B-G PDF预览

SR2150B-G

更新时间: 2024-02-08 09:34:38
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管
页数 文件大小 规格书
5页 96K
描述
Schottky Barrier Rectifier

SR2150B-G 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.65二极管类型:RECTIFIER DIODE
Base Number Matches:1

SR2150B-G 数据手册

 浏览型号SR2150B-G的Datasheet PDF文件第2页浏览型号SR2150B-G的Datasheet PDF文件第3页浏览型号SR2150B-G的Datasheet PDF文件第4页浏览型号SR2150B-G的Datasheet PDF文件第5页 
Schottky Barrier Rectifier  
SR2150-G  
Forward current: 2.0A  
Reverse voltage: 150V  
RoHS Device  
DO-15  
Features  
-Metal-Semiconductor junction with gard ring.  
0.034(0.90)  
0.028(0.70)  
DIA  
-Epitaxial consturction.  
1.0(25.4) min.  
-Low forward voltage drop.  
-High current capability.  
-The plastic material carries UL recognition 94V-0  
-For use in low voltage,high frequency inverters,  
free wheeling, and polarity protection applications.  
0.300(7.60)  
0.230(5.80)  
0.140(3.60)  
DIA  
Mechanical Data  
-Case: JEDEC DO-15 molded plastic.  
0.104(2.60)  
1.0(25.4) min.  
-Polarity: color band denoted cathode end.  
-Lead: plastic axial lead, solderable per MIL-STD-  
202E, method 208C.  
-Mounting position: any.  
-Weight: 0.4 gram.  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Ratings at Ta=25°C unless otherwise noted.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derate current by 20% .  
Symbol  
SR2150-G  
Parameter  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
150  
105  
150  
2.0  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current  
@TL=75°C  
IAV  
Peak forward surge current, 8.3ms single half sine-wave  
super Imposed on rated load (JEDEC method)  
IFSM  
50  
A
V
VF  
Maximum instantaneous forward voltage at 2.0A (Note 1)  
0.90  
@ TJ=25°C  
Maximum DC reverse current  
at rated DC blocking voltage  
IR  
IR  
1.0  
20  
mA  
pF  
@ TJ=100°C  
CJ  
RθJA  
TJ  
Typical junction capacitance (Note 3)  
Typical thermal resistance (Note 2)  
Operating temperature range  
150  
35  
°C/W  
°C  
-55 ~ +150  
°C  
Storage temperature range  
Note:  
TSTG  
-55 ~ +150  
1. Pulse test: 300µs pulse width, 1% duty cycle.  
2. Thermal resistance from junction to ambient P.C.B. mounted with 0.375" (9.5mm) lead length with 1.5"×1.5"(38×38mm) copper pads.  
3. Measured at 1.0 MHZ and reverse voltage of 4.0V  
REV:A  
Page 1  
QW-BB039  

与SR2150B-G相关器件

型号 品牌 获取价格 描述 数据表
SR2150-BP MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-41,
SR2150-BP-HF MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-41,
SR2150-G COMCHIP

获取价格

Schottky Barrier Rectifier
SR2150L GXELECTRONICS

获取价格

SCHOTTKY BARRIER RECTIFIER
SR2150L JINANJINGHENG

获取价格

LOW VF SCHOTTKY BARRIER RECTIFIER
SR2150L-DO-15 JINANJINGHENG

获取价格

LOW VF SCHOTTKY BARRIER RECTIFIER
SR2150PT TSC

获取价格

20.0 AMPS. Schottky Barrier Rectifiers
SR2150S LGE

获取价格

肖特基二极管
SR2150T-G COMCHIP

获取价格

Schottky Barrier Rectifier
SR2150-TP-HF MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-41,