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SR0530DF PDF预览

SR0530DF

更新时间: 2024-06-27 12:12:50
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
4页 1000K
描述
Reverse Voltage Vr : 30 V;Forward Current Io : 0.5 A;Max Surge Current : 3.0 A;Forward Voltage Vf : 0.45 V;Reverse Current Ir : 200 uA;Recovery Time : N/A;Package / Case : DFN1006-2;Mounting Style : SMD/SMT

SR0530DF 数据手册

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SR0530DF  
Schottky Barrier Diodes  
Features  
DFN1006-2L  
Low forward voltage  
Designed for mounting on small surface  
Extremely thin package  
Majority carrier conduction  
Mechanical Data  
DFN1006-2 Small Outline Plastic Package  
Mounting Position: Any  
MARKING:  
Maximum Ratings & Thermal Characteristics (Ratings at 25ambient temperature unless otherwise specified.)  
Parameters  
Reverse stand-off voltage  
Symbol  
VRM  
VR  
Value  
30  
Unit  
V
DC reverse voltage  
30  
V
Mean rectifying current  
IO  
500  
3
mA  
A
Peak forward surge current  
IFSM  
8.3ms single half sine-wave superimposed on rate load, 1cycle (JEDEC method)  
Thermal resistance  
RθJA  
PD  
250  
/W  
mW  
Total power dissipation TA 25°C  
Junction temperature range  
Storage temperature range  
400  
Tj  
-40~+125  
-40~+125  
TSTG  
Electrical Characteristics (Ratings at 25ambient temperature unless otherwise specified).  
Limits  
Symbols  
IR  
Parameter  
Test Condition  
Unit  
Min  
---  
Typ  
90  
---  
Max  
200  
Reverse Leakage Current  
VR=30V TA=25°C  
IF=10mA  
uA  
V
---  
0.26  
0.34  
0.45  
VF  
Forward Voltage  
Capacitance  
IF=100mA  
---  
---  
IF=500mA  
---  
---  
36  
---  
---  
CT  
VR=1V, f=1MHZ  
pF  
2023-08/97  
REV:A  

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