Datasheet > SQM40020E

SQM40020E

更新时间： 2024-11-06 14:56:03

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描述
Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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SQM40020E 数据手册

SQM40020E

Vishay Siliconix

www.vishay.com

Automotive N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

TO-263

• TrenchFET^®power MOSFET

• Package with low thermal resistance

• 100 % R_gand UIS tested

• AEC-Q101 qualified

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

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PRODUCT SUMMARY

V_DS(V)

_DS(on)() at V_GS= 10 V

_D(A)

0.00233

100

Configuration

Package

Single

TO-263

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

100

Continuous drain current ^a

I_D

_C= 125 °C

100

Continuous source current (diode conduction) ^a

Pulsed drain current ^b

I_S

100

I_DM

I_AS

280

Single pulse avalanche current

Single pulse avalanche energy

L = 0.1 mH

T_C= 25 °C

E_AS

105.8

150

Maximum power dissipation ^b

P_D

_C= 125 °C

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient

PCB mount ^c

°C/W

Junction-to-case (drain)

R_thJC

Notes

a. Package limited

b. Pulse test; pulse width  300 μs, duty cycle  2 %

c. When mounted on 1" square PCB (FR4 material)

S19-0003-Rev. A, 07-Jan-2019

Document Number: 76911

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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