5秒后页面跳转
SQJB46ELP PDF预览

SQJB46ELP

更新时间: 2024-11-06 14:53:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
11页 438K
描述
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET

SQJB46ELP 数据手册

 浏览型号SQJB46ELP的Datasheet PDF文件第2页浏览型号SQJB46ELP的Datasheet PDF文件第3页浏览型号SQJB46ELP的Datasheet PDF文件第4页浏览型号SQJB46ELP的Datasheet PDF文件第5页浏览型号SQJB46ELP的Datasheet PDF文件第6页浏览型号SQJB46ELP的Datasheet PDF文件第7页 
SQJB46ELP  
Vishay Siliconix  
www.vishay.com  
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® Gen IV Power MOSFET  
PowerPAK® SO-8L Dual  
• AEC-Q101 qualified  
D1  
• 100 % Rg and UIS tested  
• Material categorization:  
D2  
for definitions of compliance please see  
www.vishay.com/doc?99912  
1
S1  
2
G1  
3
S2  
4
G2  
D
1
D
2
1
Top View  
Bottom View  
PRODUCT SUMMARY  
VDS (V)  
G
1
G
2
40  
0.008  
0.010  
30  
R
DS(on) (Ω) at VGS = 10 V  
DS(on) (Ω) at VGS = 4.5 V  
R
S
1
S
2
ID (A) per leg  
N-Channel MOSFET  
N-Channel MOSFET  
Configuration  
Dual  
ORDERING INFORMATION  
Package  
PowerPAK SO-8L  
SQJB46ELP  
(for detailed order number please see www.vishay.com/doc?79771)  
Lead (Pb)-free and halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
40  
V
VGS  
20  
T
T
C = 25 °C a  
C = 125 °C  
30  
Continuous drain current  
ID  
27  
30  
Continuous source current (diode conduction) a  
Pulsed drain current b  
IS  
A
IDM  
IAS  
120  
Single pulse avalanche current  
Single pulse avalanche energy  
20.5  
21  
L = 0.1 mH  
EAS  
mJ  
W
T
C = 25 °C  
34  
Maximum power dissipation  
PD  
TC = 125 °C  
11  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d  
TJ, Tstg  
-55 to +175  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
85  
UNIT  
Junction-to-ambient  
PCB mount c  
°C/W  
Junction-to-case (drain)  
RthJC  
4.3  
Notes  
a. Package limited  
b. Pulse test; pulse width 300 μs, duty cycle 2 %  
c. When mounted on 1" square PCB (FR4 material)  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leaded package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection  
S22-0224-Rev. B, 07-Mar-2022  
Document Number: 77402  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SQJB46ELP相关器件

型号 品牌 获取价格 描述 数据表
SQJB46EP VISHAY

获取价格

Automotive Dual N-Channel 40 V (D-S) 175 °C M
SQJB48EP VISHAY

获取价格

Automotive Dual N-Channel 40 V (D-S) 175 °C M
SQJB60EP VISHAY

获取价格

Automotive Dual N-Channel 60 V (D-S) 175 °C M
SQJB68EP VISHAY

获取价格

Automotive Dual N-Channel 100 V (D-S) 175 °C
SQJB70EP VISHAY

获取价格

Automotive Dual N-Channel 100 V (D-S) 175 °C
SQJB80EP VISHAY

获取价格

Automotive Dual N-Channel 80 V (D-S) 175 °C M
SQJB90EP VISHAY

获取价格

Automotive Dual N-Channel 80 V (D-S) 175 °C M
SQJQ100E VISHAY

获取价格

Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQJQ100EL VISHAY

获取价格

Automotive N-Channel 40 V (D-S) 175 °C MOSFE
SQJQ112E VISHAY

获取价格

Automotive N-Channel 100 V (D-S) 175 °C MOSFE