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SQJ114EP PDF预览

SQJ114EP

更新时间: 2024-11-06 14:56:03
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威世 - VISHAY /
页数 文件大小 规格书
7页 231K
描述
Automotive N-Channel 100 V (D-S) 175 °C MOSFET

SQJ114EP 数据手册

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SQJ114EP  
Vishay Siliconix  
www.vishay.com  
Automotive N-Channel 100 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
PowerPAK® SO-8L  
• AEC-Q101 qualified  
• 100 % Rg and UIS tested  
D
• Qgd/Qgs ratio  
characteristics  
<
1
optimizes switching  
1
S
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
2
S
3
S
4
1
G
D
Top View  
Bottom View  
PRODUCT SUMMARY  
VDS (V)  
100  
0.0119  
61  
G
RDS(on) () at VGS = 10 V  
I
D (A) d  
N-Channel MOSFET  
S
Configuration  
Single  
ORDERING INFORMATION  
Package  
PowerPAK SO-8L  
SQJ114EP  
Lead (Pb)-free and halogen-free  
(for detailed order number please see www.vishay.com/doc?79776)  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
100  
V
VGS  
20  
TC = 25 °C  
61  
35  
Continuous drain current d  
ID  
T
C = 125 °C  
Continuous source current (diode conduction) d  
Pulsed drain current d  
IS  
107  
A
IDM  
IAS  
142  
Single pulse avalanche current  
Single pulse avalanche energy  
30  
L = 0.1 mH  
EAS  
45  
mJ  
W
T
C = 25 °C  
117  
Maximum power dissipation  
PD  
TC = 125 °C  
39  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) b  
TJ, Tstg  
-55 to +175  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Junction-to-ambient c  
SYMBOL  
RthJA  
LIMIT  
42  
UNIT  
PCB mount a  
°C/W  
Junction-to-case (drain)  
RthJC  
1.3  
Notes  
a. When mounted on 1" square PCB (FR4 material)  
b. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation  
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom  
side solder interconnection  
c. Using thermal characterization methods based on JESD51-14  
d. Values based on RthJC and TC of 25 °C. Actual values achievable will be dependent on the thermal characteristics of the complete system  
S23-0329-Rev. A, 15-May-2023  
Document Number: 62204  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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