Datasheet > SQ4917EY-T1_GE3

SQ4917EY-T1_GE3

更新时间： 2024-11-05 22:58:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	213K
描述
MOSFET 2 P-CHANNEL 60V 8A 8SO

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数据手册

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SQ4917EY-T1_GE3 数据手册

SQ4917EY

Vishay Siliconix

www.vishay.com

Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

• AEC-Q101 qualified ^c

SO-8 Dual

D₂

D₁

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

G₂

S₂

₁

S₁

Top View

PRODUCT SUMMARY

V_DS(V)

-60

R_DS(on)(Ω) at V_GS= -10 V

R_DS(on)(Ω) at V_GS= -4.5 V

I_D(A) per leg

0.0480

0.0612

-8

P-Channel MOSFET P-Channel MOSFET

Configuration

Dual

ORDERING INFORMATION

Package

SO-8

SQ4917EY

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-60

UNIT

V_DS

Drain-source voltage

Gate-source voltage

V_GS

T_C= 25 °C

-8

I_D

Continuous drain current

T_C= 125 °C

-4.75

-4.5

I_S

Continuous source current (diode conduction)

Pulsed drain current ^a

I_DM

I_AS

-32

Single pulse avalanche current

Single pulse avalanche energy

-22.4

L = 0.1 mH

T_C= 25 °C

E_AS

Maximum power dissipation ^a

P_D

_C= 125 °C

1.67

-55 to +175

T_J, T_stg

Operating junction and storage temperature range

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-ambient

PCB mount ^b

°C/W

R_thJF

Junction-to-foot (drain)

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b. When mounted on 1" square PCB (FR-4 material)

c. Parametric verification ongoing

S21-0375-Rev. C, 23-Apr-2021

Document Number: 62785

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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