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SQ4470EY PDF预览

SQ4470EY

更新时间: 2024-11-16 12:22:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 255K
描述
Automotive N-Channel 60 V (D-S) 175 °C MOSFET

SQ4470EY 数据手册

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SQ4470EY  
Vishay Siliconix  
www.vishay.com  
Automotive N-Channel 60 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® Power MOSFET  
• AEC-Q101 Qualifiedc  
PRODUCT SUMMARY  
VDS (V)  
60  
RDS(on) () at VGS = 10 V  
RDS(on) () at VGS = 6 V  
0.012  
0.014  
16  
• 100 % Rg and UIS Tested  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
ID (A)  
Configuration  
Single  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
Top View  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
SO-8  
SQ4470EY-T1-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
60  
V
Gate-Source Voltage  
VGS  
20  
TC = 25 °C  
16  
Continuous Drain Current  
ID  
TC = 125 °C  
9
Continuous Source Current (Diode Conduction)  
Pulsed Drain Currenta  
IS  
6
A
IDM  
IAS  
EAS  
67  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
50  
125  
L = 0.1 mH  
TC = 25 °C  
mJ  
W
7.1  
Maximum Power Dissipationa  
PD  
T
C = 125 °C  
2.3  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
80  
UNIT  
Junction-to-Ambient  
PCB Mountb  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
21  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %.  
b. When mounted on 1" square PCB (FR-4 material).  
c. Parametric verification ongoing.  
S12-1845-Rev. C, 30-Jul-12  
Document Number: 65673  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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