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SQ4435EY-T1-GE3 PDF预览

SQ4435EY-T1-GE3

更新时间: 2024-09-28 20:51:55
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
9页 248K
描述
TRANSISTOR 15000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal

SQ4435EY-T1-GE3 技术参数

生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):15 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):335 pFJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SQ4435EY-T1-GE3 数据手册

 浏览型号SQ4435EY-T1-GE3的Datasheet PDF文件第2页浏览型号SQ4435EY-T1-GE3的Datasheet PDF文件第3页浏览型号SQ4435EY-T1-GE3的Datasheet PDF文件第4页浏览型号SQ4435EY-T1-GE3的Datasheet PDF文件第5页浏览型号SQ4435EY-T1-GE3的Datasheet PDF文件第6页浏览型号SQ4435EY-T1-GE3的Datasheet PDF文件第7页 
SQ4435EY  
Vishay Siliconix  
www.vishay.com  
Automotive P-Channel 30 V (D-S) 175 °C MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
• TrenchFET® Power MOSFET  
• AEC-Q101 Qualifiedc  
PRODUCT SUMMARY  
VDS (V)  
- 30  
0.018  
0.031  
- 15  
R
DS(on) () at VGS = - 10 V  
DS(on) () at VGS = - 4.5 V  
R
ID (A)  
• 100 % Rg and UIS Tested  
Configuration  
Single  
• Compliant to RoHS Directive 2002/95/EC  
S
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
Top View  
P-Channel MOSFET  
ORDERING INFORMATION  
Package  
SO-8  
SQ4435EY-T1-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
- 30  
UNIT  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
T
C = 25 °C  
- 15  
ID  
Continuous Drain Current  
TC = 125 °C  
- 8.7  
- 6.2  
- 60  
IS  
Continuous Source Current (Diode Conduction)  
Pulsed Drain Currenta  
A
IDM  
IAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
- 25  
L = 0.1 mH  
EAS  
31  
mJ  
W
TC = 25 °C  
6.8  
Maximum Power Dissipationa  
PD  
TC = 125 °C  
2.3  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
85  
UNIT  
PCB Mountb  
Junction-to-Ambient  
°C/W  
RthJF  
Junction-to-Foot (Drain)  
22  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %.  
b. When mounted on 1" square PCB (FR-4 material).  
c. Parametric verification ongoing.  
S11-2109 Rev. B, 31-Oct-11  
Document Number: 67932  
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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