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SPV1512N PDF预览

SPV1512N

更新时间: 2024-12-01 20:06:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 光电二极管
页数 文件大小 规格书
12页 303K
描述
12 V reverse voltage cool bypass switch

SPV1512N 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:VFQFPN-8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:5.74其他特性:IR-NOM
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-N2
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
参考标准:IEC-61000-4-5最大重复峰值反向电压:12 V
最大反向电流:10 µA子类别:Rectifier Diodes
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SPV1512N 数据手册

 浏览型号SPV1512N的Datasheet PDF文件第2页浏览型号SPV1512N的Datasheet PDF文件第3页浏览型号SPV1512N的Datasheet PDF文件第4页浏览型号SPV1512N的Datasheet PDF文件第5页浏览型号SPV1512N的Datasheet PDF文件第6页浏览型号SPV1512N的Datasheet PDF文件第7页 
SPV1512  
12 V reverse voltage cool bypass switch  
Datasheet - preliminary data  
x
Junction temperature range TJ from -40 °C  
to 150 °C  
Applications  
x
x
Photovoltaic panels  
Solar farm  
Description  
The SPV1512 is a cool bypass switch with a very  
low forward voltage drop and ultra low reverse  
leakage current. The former drastically reduces  
the power dissipation in bypass mode and  
prolongs the lifetime of the device, by reducing  
maintenance costs and shutdown due to a device  
failure. The latter allows the device to work at  
very high temperature avoiding thermal runaway  
phenomenon. These are clearly key benefits for  
all those applications requiring low power  
consumption to increase the system lifetime and  
maximize the power transfer from harvesting  
source to the load. For all these reasons and the  
strong ESD robustness, the cool bypass switch is  
the significant evolution with respect to the  
traditional standard Schottky diode.  
Features  
x
x
Maximum forward current IF = 16 A  
Maximum reverse recovery mode VR up to  
12 V  
x
x
Very low forward voltage drop:  
VF = 120 mV @ IF = 10 A, TAMB= 125 °C  
Ultra low reverse leakage current:  
IR = 100 μA @ VR = 12 V, TAMB= 125 °C  
x
x
ESD HBM level (JESD22-A114) up to 8 kV  
Surge test level (IEC61000-4-5) up to 2 kV  
Table 1: Device summary  
Package  
Order code  
Operating temperature range  
Packing  
VFQFPN (6x5x0.75) 8L  
SPV1512N  
-40 to 125 °C  
Tape and reel  
October 2015  
DocID023620 Rev 2  
1/12  
www.st.com  
This is preliminary information on a new product now in development  
or undergoing evaluation. Details are subject to change without  
notice.  

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